C650

C650 BOURNS | Alldatasheet

Document overview

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Technical content

Features

■ Formerly brand ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Very high bandwidth; GHz compatible ■ Small package, minimal PCB area ■ Simple, superior circuit protection ■ RoHS compliant*, UL Recognized

Applications

■ Combo voice / xDSL linecards ■ Voice linecards ■ MDF, primary protection modules ■ Process control equipment ■ Test and measurement equipment ■ General electronics TBU™ C650 and C850 Protectors *RoHS Directive 2002/95/EC Jan 27 2003 including Annex. Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications. Transient Blocking Units - TBU™ Devices Bourns® C650 and C850 series products are high speed bidirectional protection components, constructed using MOSFET semiconductor technology, designed to protect against faults caused by short circuits, AC power cross, induction and lightning surges. The TBU™ high speed protector, triggering as a function of the MOSFET, blocks surges and provides an effective barrier behind which sensitive electronics are not exposed to large voltages or currents during surge events. The TBU™ device is provided in a surface mount DFN package and meets industry standard requirements such as RoHS and Pb Free solder refl ow profi les. Electrical Characteristics (Tamb = 25 °C) C650 and C850 TBU™ protectors are bidirectional; specifi cations are valid in both directions. Symbol Parameter Min. Typ. Max. Unit Iop Maximum current through the device that will not cause current blocking Cx50-100-WH Cx50-180-WH Cx50-260-WH 100 180 260 mA I trigger Typical current for the device to go from normal operating state to protected state Cx50-100-WH Cx50-180-WH Cx50-260-WH 150 220 330 mA I out Maximum current through the device Cx50-100-WH Cx50-180-WH Cx50-260-WH 200 360 520 mA R TBU Series resistance of the TBU™ device C650-100-WH C650-180-WH C650-260-WH C850-100-WH C850-180-WH C850-260-WH 14.5 Ω t block Maximum time for the device to go from normal operating state to protected state 1µ s Iquiescent Current through the triggered TBU™ device with 50 Vdc circuit voltage 1m A Vreset Voltage below which the triggered TBU™ device will transition to normal operating state 14 V Absolute Maximum Ratings (Tamb = 25 °C) Symbol Parameter Value Unit Vimp Maximum protection voltage for impulse faults with rise time ≥ 1 µsec C650-xxx-WH C850-xxx-WH 650 850 V Vrms Maximum protection voltage for continuous Vrms faults C650-xxx-WH C850-xxx-WH 300 425 V Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -65 to +150 °C Agency Approval UL recognized component File # E315805. Industry Standards Description Model Telcordia GR-1089 Port Type 1, 3, 5 C650 C850 GR-974 C650 C850 *RoHS COMPLIANT

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications. Typical Performance Characteristics TBU™ C650 and C850 Protectors V-I Characteristics Time to Block vs. Fault Current Current vs. Temperature -Itrigger Vreset -Vreset Itrigger 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 0.1 1 10 100 1000 Fault Current (A ) Time to Block (sec) 100 120 140 -40 -20 0 20 40 60 80 Temperature (°C) % of Current

TEST CONFIGURATION DIAGRAM V1 V2 Load TBU™ C650 and C850 Protectors Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications. Operational Characteristics C650 Lightning, 650 V C850 Lightning, 850 V The graphs below demonstrate the operational characteristics of the TBU™ protector. For each graph the fault voltage, protected side voltage, and current is presented. C650 Power Fault, 300 Vrms, 100 A C850 Power Fault, 425 Vrms, 100 A 1 µs/div. 100 V/div. 400 mA/div. Ch1 V1 Ch2 V2 Ch3 Current 1 µs/div. 100 V/div. 400 mA/div. Ch1 V1 Ch2 V2 Ch3 Current 4 ms/div. 100 V/div. 200 mA/div. Ch1 V1 Ch2 V2 Ch3 Current 4 ms/div. 100 V/div. 200 mA/div. Ch1 V1 Ch2 V2 Ch3 Current

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications. TBU™ C650 and C850 Protectors Product Dimensions 32 1 PIN 1 TOP VIEW SIDE VIEW BOTTOM VIEW A D BE C JJ N N H E K K F DIMENSIONS: MM (INCHES) Dim. Min. Typ. Max. A 3.90 (.154) 4.00 (.157) 4.10 (.161) B 8.15 (.321) 8.25 (.325) 8.35 (.329) C 0.80 (.031) 0.85 (.033) 0.90 (.035) D 0.000 (.000) 0.025 (.001) 0.050 (.002) E 2.55 (.100) 2.60 (.102) 2.65 (.104) F 1.10 (.043) 1.15 (.045) 1.20 (.047) H 3.45 (.136) 3.50 (.138) 3.55 (.140) J 0.20 (.008) 0.25 (.010) 0.30 (.012) K 0.65 (.026) 0.70 (.028) 0.75 (.030) N 0.20 (.008) 0.25 (.010) 0.30 (.012) Recommended Pad Layout 3.55 (.140) 0.70 (.028) 1.15 (.045) 2.625 (.103) Pad # Apply

1 In/Out

3 In/Out

NC = Solder to PCB; do not make electrical connection, do not connect to ground. Pad Designation TBU™ protectors have matte-tin termination fi nish. Suggested layout should use non-solder mask defi ne (NSMD). Recommended stencil any power device, it is recommended that, wherever possible, extra PCB copper area is allowed. For minimum parasitic capacitance, do not allow any signal, ground or power signals beneath any of the pads of the device. Thermal Resistances Symbol Parameter Value Unit Rth(j-a) Junction to leads (package) 116 °C/W Refl ow Profi le Profi le Feature Pb-Free Assembly Average Ramp-Up Rate (Tsmax to Tp) 3 °C/sec. max. Preheat - Temperature Min. (Tsmin) - Temperature Max. (Tsmax) - Time (tsmin to tsmax) 150 °C 200 °C 60-180 sec. Time maintained above: - Temperature (TL) - Time (tL) 217 °C 60-150 sec. Peak/Classifi cation Temperature (Tp) 260 °C Time within 5 °C of Actual Peak Temp. (tp) 20-40 sec. Ramp-Down Rate 6 °C/sec. max. Time 25 °C to Peak Temperature 8 min. max.

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications. TBU™ C650 and C850 Protectors Typical Part MarkingHow to Order C 650 - 180 - WH Form Factor C = One TBU ™ protector in the device Impulse Voltage Rating 650 = 650 V 850 = 850 V Iop Indicator 100 = 100 mA 180 = 180 mA 260 = 260 mA PIN 1 MARKING NUMBER C65A = C650-100-WH C65B = C650-180-WH C65C = C650-260-WH C85A = C850-100-WH C85B = C850-180-WH C85C = C850-260-WH MANUFACTURING DATE CODE* - 1ST DIGIT INDICATES THE YEAR’S 6-MONTH PERIOD. - 2ND DIGIT INDICATES THE WEEK NUMBER IN THE 6-MONTH PERIOD. - 3RD & 4TH DIGITS INDICATE SPECIFIC LOT FOR THE WEEK. 6-MONTH PERIOD CODES: A = JAN-JUN 2009 C = JAN-JUN 2010 E = JAN-JUN 2011 B = JUL-DEC 2009 D = JUL-DEC 2010 F = JUL-DEC 2011 EXAMPLE: ARBC - 1ST DIGIT ‘A’ = JAN-JUN 2009 - 2ND DIGIT ‘R’ = WEEK 18; WEEK OF APRIL 27 - 3RD & 4TH DIGITS ‘BC’ = LOT SPECIFIC INFORMATION MANUFACTURER’S TRADEMARK* *TRANSITION FROM FULTEC TRADEMARK AND LOT CODE TO BOURNS TRADEMARK AND DATE CODE IN 2009. Packaging Specifi cations (per EIA468-B) B A D C N F G (MEASURED AT HUB) USER DIRECTION OF FEED CENTER LINES OF CAVITY EMBOSSMENT t D TOP COVER TAPE E W P DIMENSIONS: MM (INCHES) Device A B C D G N C650, C850 326 (12.835) 330.25 (13.002) 1.5 (.059) 2.5 (.098) 12.8 (.504) 13.5 (.531) 20.2 (.795) - 16.5 (.650) 102 (4.016) Device A0 B 0 D D 1 E F C650, C850 4.2 (.165) 4.4 (.173) 8.45 (.333) 8.65 (.341) 1.5 (.059) 1.6 (.063) 1.5 (.059) - 1.65 (.065) 1.85 (.073) 7.4 (.291) 7.6 (.299) Device K0 P P 0 P 2 t W C650, C850 1.1 (.043) 1.3 (.051) 7.9 (.311) 8.1 (.319) 3.9 (.159) 4.1 (.161) 1.9 (.075) 2.1 (.083) 0.25 (.010) 0.35 (.014) 15.7 (.618) 16.3 (.642) QUANTITY: 3000 PIECES PER REEL

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications. TBU™ C650 and C850 Protectors Reference Application The C-series devices are general use protectors used in a wide variety of applications. The following diagram is one common confi guration example of C-series device placement. A cost-effective protection solution combines Bourns® TBU™ protection devices with a pair of MOVs or Bourns® GDTs. The fi gure below demonstrates the operational characteristics of the circuit. Equip. OVP Line TBU™ Device TBU™ Device OVP V1 V2 Line Common Confi guration Diagram C850 with G5200AS 4000 V Lightning 10/700 µsec, 150 A 1 ms/div. 200 mA/div. Ch1 V1 Ch2 V2 Ch3 Current Asia-Pacifi c: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com COPYRIGHT©2008, BOURNS, INC. LITHO IN U.S.A. e 11/08 FU0801 REV. 03/10