C6084 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD C6084 NPN SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 4 Copyright © 2010 Unisonic Technologies Co., LTD QW-R203-039.C SWITCHING REGULATOR

APPLICATIONS

„ FEATURES * High Speed. * High Breakdown Voltage (VCBO=1500V). * High Reliability. TO-2201

1 TO-220F

„ ORDERING INFORMATION Ordering Number Pin Description Lead Free Halogen Free Package 1 2 3 Packing C6084L-TA3-T C6084G-TA3-T TO-220 B C E Tube C6084L-TF3-T C6084G-TF3-T TO-220F B C E Tube C6084L-T60-K C6084G-T60-K TO-126 B C E Bulk

C6084 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 2 0 3 - 0 3 9 . C „ ABSOLUTE MAXIMUM RATING (TA=25℃) PARAMETER SYMBOL RATINGS UNIT TO-220 1.5 Collector-Base Voltage TO-126 VCBO 1.4 KV Collector-Emitter Voltage V CEO 800 V Emitter-Base Voltage V EBO 5 V TO-220 5 TO-126 IC 3 A TO-220 12 Collector Current TO-126 ICP 6 A TO-220 1.75 W Collector Dissipation TO-126 PC 1.25 W Junction Temperature T J 150 °C Storage Temperature T STG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (TA=25℃) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cutoff Current I CBO V CB=800V, IE=0A 10 µA Collector Cutoff Current I CES V CE=1500V, RBE=0Ω 1.0 mA Collector Sustain Voltage V CEO(SUS) I C=10mA, IB=0A 800 V Emitter Cutoff Current I EBO V BE=4V, IC=0A 1.0 mA TO-220 I C=2.7A, IB=0.54A 3 Collector-Emitter Saturation Voltage TO-126 VCE(SAT) IC=1.4A, IB=0.27A 3 V TO-220 IC=2.7A, IB=0.54A 1.5Base-Emitter Saturation Voltage TO-126 VBE(SAT) IC=1.4A, IB=0.27A 1.5 V TO-220/TO-126 h FE1 V CE=5V, IC=0.5A 10 TO-220 VCE=5V, IC=3A 5 7 DC Current Gain TO-126 hFE2 VCE=5V, IC=1.8A 5 7 Fall Time T F I C=1.8A, IB1=0.36A, IB2=-0.72A 0.2 µS

C6084 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 2 0 3 - 0 3 9 . C „ TEST CIRCUIT RL=111Ω RB 50Ω PW=20µs D.C.≤1% INPUT IB1 IB2 VR 100µF VBE=-5V 470µF OUTPUT VCC=200V

C6084 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 2 0 3 - 0 3 9 . C „ TYPICAL CHARACTERISTICS Collector Current VS. BVCES Collector Current , IC(mA) Collector-Emitter Breakdown Voltage ,BVCES (kV) 0.6 1.2 0.2 0.4 0.8 1.0 1.4 Collector Current VS. BVCBO Collector Current , IC(mA) Collector-Base Breakdown Voltage ,BVCBO (kV) 0.6 1.2 0.2 0.4 0.8 1.0 1.4 Emitter Current VS. BVEBO Emitter Current , IE(mA) Emitter-Base Breakdown Voltage ,BVEBO (V) 0.6 1.2 205 10 15 0.2 0.4 0.8 1.0 1.4 1.6 1.8 Collector Current VS. VCEO(SUS) Collector Current , IC(mA) Collector-Emitter Voltage ,VCEO(SUS) (kV) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.