C5855

2SC5855 TOSHIBA | Alldatasheet

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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage : V CBO = 1500 V z Low Saturation Voltage : V CE (sat) = 3 V (max) z High Speed : t f(2) = 0.1 µs (typ.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Base Voltage V CBO 1500 V Collector−Emitter Voltage V CEO 700 V Emitter−Base Voltage V EBO 5 V DC I C 10 Collector Current Pulse ICP 20 A Base Current I B 5 A Collector Power Dissipation P C 50 W Junction Temperature T j 150 °C Storage Temperature Range T stg −55~150 °C ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT Collector Cut−off Current I CBO VCB = 1500 V, IE = 0 ― ― 1 mA Emitter Cut−off Current I EBO VEB = 5 V, IC = 0 ― ― 100 µA Collector − Emitter Breakdown Voltage V (BR) CEO IC = 10 mA, IB = 0 700 ― ― V hFE (1) VCE = 5 V, IC = 1 A 28 ― 60 hFE (2) VCE = 5 V, IC = 6 A 6.2 ― 10 DC Current Gain hFE (3) VCE = 5 V, IC = 8 A 4.3 ― 6.7 Collector−Emitter Saturation Voltage V CE (sat) IC = 8 A, IB = 2 A ― ― 3 V Base−Emitter Saturation Voltage V BE (sat) IC = 8 A, IB = 2 A ― 1.0 1.4 V Transition Frequency f T VCE = 10 V, IC = 0.1 A ― 2 ― MHz Collector Output Capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz ― 120 ― pF Storage Time t stg(1) ― 2.8 ― Fall Time tf(1) ICP = 6 , IB1 (end) = 0.8 A fH = 32 kHz ― 0.2 ― µs Storage Time t stg(2) ― 2.3 ― Switching Time Fall Time t f(2) ICP = 5.5 A, IB1 (end) = 0.8 A fH = 80 kHz ― 0.1 ― µs Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16E3A Weight: 5.5 g (typ.)

Collector current I C (A) hFE – IC DC current gain h FE 100 0.01 Tc = 100°C −25 0.1 1 10 Common emitter VCE = 5 V Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) 2 4 6 8 10 0.6 1.4 2.0 IB = 0.2 A 1.6 0.4 2.5 Common emitter Tc = 25℃ 0.8 1.2 1.8 1.0 Collector current I C ( A ) IC – VBE Base-emitter voltage V BE (V) −25 Tc = 100°C Common emitter VCE = 5 V

Collector-emitter voltage V CE (V) Base current I C (A) VCE – IB 7 5 6 Ic = 8 A Common emitter Tc = 100℃ Base current I B ( A ) VCE – IB Collector-emitter voltage V CE (V)

6 Ic = 8 A 5

Tc = −25℃ Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) 100 1 0.1 0.01 Common emitter Tc = 25℃ 6 10 IC/IB = 4 Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) ( V ) 0.1 0.01 100 1 10 Common emitter Tc = 10 0℃ 6 10 IC/IB = 4 0.01 0.1 VCE(sat) – IC Collector-emitter saturation voltage VCE(sat) (V) Collector current I C (A) 1 10 100 6 10 IC/IB = 4 Common emitter Tc = −25℃ Base current I B (A) VCE – IB Collector-emitter voltage V CE (V) 75 6 Ic = 8 A Common emitter Tc = 25℃

rth(j-c) – tw Transient thermal impedance (junction-case) r th(j-c) (°C/W) Pulse width t w (s) 0.001 10μ 1000 100μ 1m 100m 10 100 0.01 Tc = 25℃ (Infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.1 10m 1 Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C ( A ) 0.01 100 1 ms* 10 ms* VCEO max 100 µs* 100 ms* IC max (Continuous) 1 100 100010 0.1 10 µs* DC operation Tc = 25°C *: Single nonrepetitive pulse Tc = 25 °C Curves must be derated linearly with increase in temperature. IC max (Pulse)* Collector power dissipation P C (W) Case temperature Tc (°C) PC – T c 0 25 75 100 125 150 100 Infinite heat sink Collector-emitter voltage V CE (V) Reverse Bias – Safe Operating Area Collector current I C ( A ) 100 0.1 0.001 10000 10 100 Ta = 2 5℃ Non repeated pulse IB2 = −2A L = 500 μH 0.01 1000 VCBO max IC max (Pulse) 290V,20A 1500V,2mA

• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
• TOSHIBA is continually working to improve the quality an d reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619EAARESTRICTIONS ON PRODUCT USE