C5802

KSC5802 FAIRCHILD | Alldatasheet

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©2000 Fairchild Semiconductor International Rev. B. February 2000 KSC5802 TO-3PF1 NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 10 A ICP Collector Current (Pulse) 30 A PC Collector Dissipation (TC=25°C) 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICES Collector Cut-off Current V CE = 1400V, VBE=0 1 mA ICBO Collector Cut-off Current V CB = 800V, IE = 0 10 uA IEBO Emitter Cut-off Current V EB = 4V, IC = 0 1 mA hFE1 hFE2 DC Current Gain V CE = 5V, IC = 1A VCE = 5V, IC = 6A VCE(sat) Collector-Emitter Saturation Voltage I C = 6A, IB = 1.5A 3 V VBE(sat) Base-Emitter Saturation Voltage I C = 6A, IB = 1.5A 1.5 V tF Fall Time V CC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω 0.1 0.3 µs KSC5802 High Voltage Color Display Horizontal Deflection Output (No Damper Diode)  High Breakdown Voltage : BV CBO=1500V  High Speed Switching : t F=0.1µs (Typ.)  Wide S.O.A  For C-Monitor(69KHz) 1.Base 2.Collector 3.Emitter

©2000 Fairchild Semiconductor International KSC5802 Rev. B. February 2000 Typical Characteristics 0123456 789 1 0 IB=0.2A IB=0.4A IB=0.6A IB=0.8A IB=1.0A IB=1.2A IB=1.4AIB=1.6A IB=1.8A IB=2A STATIC CHARACTERISTIC Ic[A], COLLECTOR CURRENT VCE[V], COLLECTOR EMITTER VOLTAGE 0.1 1 10 100 DC CURRENT GAIN 125/G01/G01/G01/G01 75/G01/G01/G01/G01 25/G01/G01/G01/G01 Vce=5V hFE, DC CURRENT GAIN Ic [A], COLLECTOR CURRENT 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 BASE-EMITTER SATURATION VOLTAGE 1 125/G01/G01/G01/G01 75/G01/G01/G01/G01 25/G01/G01/G01/G01 Ic=3Ib Vbe(sat) [mV], SATURATION VOLTAGE Ic [A], COLLECTOR CURRENT Vce=5V BASE EMITTER ON VOLTAGE Ic [A], COLLECTOR CURRENT Vbe [V], BASE EMITTER VOLTAGE 0.1 1 10 COLLECTOR-EMITTER SATURATION VOLTAGE 1 125/G01/G01/G01/G01 75/G01/G01/G01/G01 25/G01/G01/G01/G01 Ic=3Ib Vce(sat) [m V], SATURATION VOLTAGE Ic [A], COLLECTOR CURRENT 0.1 1 10 COLLECTOR-EMITTER SATURATION VOLTAGE 2 125/G01/G01/G01/G01 75/G01/G01/G01/G01 25/G01/G01/G01/G01 Ic=5Ib Vce(sat) [m V], SATURATION VOLTAGE Ic [A], COLLECTOR CURRENT

©2000 Fairchild Semiconductor International KSC5802 Rev. B. February 2000 Typical Characteristics (continued) 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 BASE-EMITTER SATURATION VOLTAGE 2 125/G01/G01/G01/G01 75/G01/G01/G01/G01 25/G01/G01/G01/G01 Ic=5Ib Vbe(sat) [mV], SATURATION VOLTAGE Ic [A], COLLECTOR CURRET IB2= -1A CONST (at IC>5A) IC=5IB1=-5IB2 L=500uH SINGLE PULSE 10 100 1000 10000 0.1 100 REVERSE BIAS SAFE OPERATING AREA IC(A), COLLECTOR CURRENT VCE(V), COLLECTOR-EMITTER VOLTAGE 1 10 100 1000 10000 0.01 0.1 100 SAFE OPERATING AREA Ic MAX. SINGLE PULSE Tc=25oC 100uS 300uS 1mS 10mS DC IC(A), COLLECTOR CURRENT VCE(V), COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 175 200 POWER DERATING PD(W), POWER DISSIPATION Tc(C), CASE TEMPERATURE

©2000 Fairchild Semiconductor International Rev. B. February 2000 KSC5802 Package Dimension 26.50 ±0.20 4.50 ±0.20 10° 16.50 ±0.20 22.00 ±0.20 23.00 ±0.20 1.50 ±0.20 14.50 ±0.20 2.00 ±0.20 2.00 ±0.20 2.00 ±0.20 0.85 ±0.03 2.00 ±0.20 5.50 ±0.20 3.00 ±0.20 (1.50) 3.30 ±0.20 2.00 ±0.20 4.00 ±0.20 2.50 ±0.20 14.80 ±0.20 3.30 ±0.20 2.00 ±0.20 5.50 ±0.20 0.75+0.20 –0.10 0.90+0.20 –0.10 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] TO-3PF

©2000 Fairchild Semiconductor International Rev. B. February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E 2CMOS™ FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.