C547A

BC546 PANJIT | Alldatasheet

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PAGE . 1STAD-DEC.02.2005 BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V 625 mWatts

FEATURES

• NPN epitaxial silicon, planar design  Collector current IC = 100mA  Complimentary (PNP) device:BC556,BC557,BC558 Series  Pb free product :99% Sn above can meet RoHS environment substance directive request MECHANICAL DATA  Case: TO-92  Terminals: Solderable per MIL-STD-202, Method 208  Approx Weight : 0.02grams  Device Marking : POWER ABSOLUTE MAXIMUM RATINGS THERMAL CHARACTERISTICS A645=A645CBB 645=B645CB- A745=A745CBB 745=B745CBC 745=C745CB A845=A845CBB 845=B845CBC 845=C845CB RETEMARAPl obmySe ulaVs tinU egatloVrettimE-rotcelloC 645CB 745CB 845CB V OEC V egatloVesaB-rotcelloC 645CB 745CB 845CB V OBC V egatloVesaB-rettimE 645CB 745CB 845CB V OBE 0.6 0.6 0.5 V suounitnoC-tnerruCrotcelloCI C 001A m noitapissiDrewoPxaMP TOT 526W m erutarepmeTegarotST GTS 051ot55- OC erutarepmeTnoitcnuJT J 051ot55- OC RETEMARAPl obmySe ulaVs tinU tneibmAotnoitcnuJ,ecnatsiseRlamrehT Rθ AJ 002 O W/C

PAGE . 2STAD-DEC.02.2005 BC546,BC547,BC548 SERIES ELECTRICAL CHARACTERISTICS (T J=25O C, unless otherwise noted) RETEMARAPl obmyS. NIM. PYT. XAMs tinU egatloVnwodkaerBrettimE-rotcelloC I( C I,Am01= B )0= B,A645CB C,B,A745CB C,B,A845CB V )RB( OEC -- V egatloVnwodkaerBesaB-rotcelloC I( C I,Au01= E )0= B,A645CB C,B,A745CB C,B,A845CB V )RB( OBC -- V egatloVnwodkaerBesaB-rettimE I( E I,Au01= C )0= B,A645CB C,B,A745CB C,B,A845CB V )RB( OBE 0.6 0.6 0.5 -- V V(tnerruCffotuCesaB-rettimE BE )V5=I OBE -- 0 01A n V(tnerruCffotuCesaB-rotcelloC BC I,V03= E )0= TJ 051= OC I OBC 0.5 An Au niaGtnerruCCD C V,Au01= EC )V5= I( C V,Am0.2= EC )V5= B,A645CB C,B,A745CB C,B,A845CB B,A645CB C,B,A745CB C,B,A845CB h EF 011 002 024 051 072 081 092 025 022 054 008 egatloVnoitarutaSrettimE-rotcelloC I( C I,Am01= B )Am5.0= I( C I,Am001= B )Am0.5= V )TAS(EC 52.0 6.0 V egatloVnoitarutaSrettimE-esaB I( C I,Am01= B )Am5.0= I( C I,Am001= B )Am0.5= V )TAS(EB 7.0 9.0 - V egatloVrettimE-esaB I( C Am2= ,V EC )Am5.0= I( C V,Am01= EC )Am0.5= V )TAS(EB 85.0 066.0 07.0 77.0 V ecnaticapaCesaB-rotcelloCV ( BC I,V01= E HM1=f,0= Z)C OBC -- 5 .4F p LEGAL STATEMENT Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.

PAGE . 3STAD-DEC.02.2005 BC546,BC547,BC548 SERIES ELECTRICAL CHARACTERISTICS CURVE BC546A,BC547A,BC548A ONLY 100 25 50 75 100 125 150 Junction Temperature, TJ (OC) ICB0, Collector Current (nA) VCB=30V 100 150 200 250 300 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) hF E TJ=25 C TJ=100˚ C TJ=150˚ C VCE=5V 200 400 600 800 1000 1200 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) VBE(ON), (mV) TJ = 25 ˚C TJ = 150 ˚C TJ = 100 ˚C VCE=5V 100 1000 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) VCE(sat), (mV) TJ = 25 ˚C TJ = 150 ˚C TJ = 100 ˚C IC/IB=20 200 400 600 800 1000 1200 0.01 0.1 1 10 100 Collector Current, I C (mA) VBE(sat), (mV) TJ = 25 ˚C TJ = 150 ˚C TJ = 100 ˚C IC/IB=20 0.1 1 10 100 Revers e Voltage (V) Capacitance, C (pF ) TJ = 25 ˚C Cib (EB) Cob (CB) Fig. 3. Typical V BE(ON) vs. Fig. 4. Typical V CE(SAT) vs.

PAGE . 4STAD-DEC.02.2005 BC546,BC547,BC548 SERIES ELECTRICAL CHARACTERISTICS CURVE BC546B,BC547B,BC548B ONLY 100 25 50 75 100 125 150 Junction Temperature, TJ (OC) ICB0, Collector Current (nA) VCB=30V 100 150 200 250 300 350 400 450 500 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) hF E TJ=25 ˚C TJ=100˚ C TJ=150˚ C VCE=5V 200 400 600 800 1000 1200 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) VBE(ON), (mV) TJ = 25 ˚C TJ = 150 ˚C TJ = 100 ˚C VCE=5V 100 1000 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) VCE(sat), (mV) TJ = 25 ˚C TJ = 150 ˚C TJ = 100 ˚C IC/IB=20 200 400 600 800 1000 1200 0.01 0.1 1 10 100 Collector Current, IC (mA) VBE(sat), (mV) TJ = 25 ˚C TJ = 150 ˚C TJ = 100 ˚C IC/IB=20 0.1 1 10 100 Revers e Voltage (V) Capacitance, C (pF ) TJ = 25 ˚CCib (EB) Cob (CB) Fig. 3. Typical V BE(ON) vs. Collector Current Fig. 4. Typical V CE(SAT) vs. Collector Current

PAGE . 5STAD-DEC.02.2005 BC546,BC547,BC548 SERIES ELECTRICAL CHARACTERISTICS CURVE BC547C,BC548C ONLY 100 25 50 75 100 125 150 Junction Temperature, TJ (OC) ICB0, Collector Current (nA ) VCB=30V Fig. 1. Typical I CB0 vs. Junction 200 400 600 800 1000 1200 0.01 0.1 1 10 100 1000 Collector Current, IC, (mA) hFE TJ=25 C TJ=100˚ C TJ=150˚ C VCE=5V 200 400 600 800 1000 1200 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) VBE(ON), (mV) TJ = 25 ˚C TJ = 150 ˚C TJ = 100 ˚C VCE=5V 100 1000 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) VCE(sat), (mV) TJ = 25 ˚C TJ = 150 ˚C TJ = 100 ˚C IC/IB=20 200 400 600 800 1000 1200 0.01 0.1 1 10 100 Collector Current, IC (mA) VBE(sat), (mV) TJ = 25 ˚C TJ = 150 ˚C TJ = 100 ˚C IC/IB=20 0.1 1 10 100 Revers e Voltage (V) Capacitance, C (pF ) TJ = 25 ˚CCib (EB) Cob (CB) Fig. 3. Typical V BE(ON) vs. Collector Current Fig. 2. Typical h FE vs. Collector Fig. 4. Typical V CE(SAT) vs. Collector