2SC5339 TOSHIBA | Alldatasheet
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TOSHIBA 2$C5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION Unit in mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS peSEO5-, 036203 430203 SI ae yf | exe ma 8 = 3 | «| ¢ High Voltage : Vopo = 1500V qe alg alg 3 e@ Low Saturation Voltage : VCE (sat) = 5 V (Max.) * |S . he neo? e High Speed : tg = 0.2 ws (Typ.) 4.0 M Ps 23maxt ll alg e Bult-in Damper Type o.9smax\\l § © Collector Metal (Fin) is Fully Covered with Mold Resin. wat - 83 q MAXIMUM RATINGS (Ta = 25°C) 7 CHARACTERISTIC SYMBOL | RATING | UNIT |] Ei 1. BASE Collector-Base Voltage VCBO 1500 “Il 2. COLLECTOR Collector-Emitter Voltage Vcro | 600 | V_ | 3. EMITTER Emitter-Base Voltage VEBO JEDEC = leas Colletor Current | “Pulse [tgp [a || Fs a wise CP TOSHIBA _2-16E3A aa ae Collector Power Dissipation P 50 w eight : 5.5 g (Typ.) (Te = 25°C) c Storage Temperature Range —55~150 EQUIVALENT CIRCUIT COLLECTOR BASE rt 45.0 (Typ) 6 EMITTER @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-07-20 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current IcBO Vcp = 1500 V, Ip =0 | — | — | 1[ mA] Emitter Cutoff Current | Ippo [Vip = 5V, Io =0 [af — | 250 | ma | Emitter-Base Breakdown = wo [acomnees | «[-[-| DC Current Gain hrE (2) [VCE =5V, Ig =5A | 4{— | 8] Collector-Emitter Saturation a ee Base-Emitter Saturation veifesvaneuea [= [oe [| Forward Voltage _ sae [wee eco Transition Frequency Von =10V, Ig =01A C— [24[ — [ne | Collector Output Capacitance Vcp = 10V, Ig = 0, f= 1 MHz [| — | s2| — | pF | Switching Storage Time Ip = 5A, Ipy (end) = 1.1A [— | 4{ 6| Time Fall Time fy = 91.5 kHz [= o2t os] “ 1999-07-20 2/5
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2 ons \\ 0 25 60. 75 100 125 160 175 8 tS NTT FREE HERNAN EH CASH TEMPERATURE Te (CC) 0.08 3 SINGLE NoNREPETITIVE [tN oa) PULSE Te=250 iT NH “| Curves must be derated nil II linearly with increase in ll VoEo MAX. Hill oor temperature. 3 10 30 100 300 1000 COLLECTOR-EMITTER VOLTAGE Vcg (V) 1999-07-20 5/5