C5338D

KSC5338D FAIRCHILD | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338D/KSC5338DW D2-PAK TO-220 NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation(TC=25°C) 75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Characteristics Rating Unit Rθjc Thermal Resistance Junction to Case 1.65 °C/W Rθja Junction to Ambient 62.5 TL Maximun Lead Temperature for Soldering 270 °C KSC5338D/KSC5338DW High Voltage Power Switch Switching Application  Wide Safe Operating Area  Built-in Free-Wheeling Diode  Suitable for Electronic Ballast Application  Small Variance in Storage Time  Two Package Choices : TO-220 or D2-PAK 1.Base 2.Collector 3.Emitter C B E Equivalent Circuit

©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338D/KSC5338DW Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage I C=1mA, IE=0 1000 V BVCEO Collector-Emitter Breakdown Voltage I C=5mA, IB=0 450 V BVEBO Emitter-Base Breakdown Voltage I E=1mA, IC=0 12 V ICBO Collector Cut-off Current V CB=800V, IE=0 10 µA ICES Collector Cut-off Current V CES=1000V, IEB=0 TC=25°C 100 µA TC=125°C 500 µA ICEO Collector Cut-off Current V CE=450V, IB=0 T C=25°C 100 µA TC=125°C 500 µA IEBO Emitter Cut-off Current V EB=10V, IC=0 10 µA hFE DC Current Gain V CE=1V, IC=0.8A T C=25°C1 52 5 TC=125°C1 0 1 4 VCE=1V, IC=2A T C=25°C6 9 TC=125°C4 6 VCE=2.5V, IC=1A T C=25°C1 82 5 TC=125°C1 4 1 8 VCE(sat) Collector-Emitter Saturation Voltage I C=0.8A, IB=0.08A T C=25°C 0.35 0.5 V TC=125°C0 . 5 5 0 . 7 5 V IC=2A, IB=0.4A T C=25°C0 . 4 7 0 . 7 5 V TC=125°C0 . 9 1 . 1 V IC=0.8A, IB=0.04A T C=25°C0 . 9 1 . 5 V TC=125°C1 . 8 2 . 5 V IC=1A, IB=0.2A T C=25°C 0.22 0.5 V TC=125°C0 . 3 0 . 6 V VBE(sat) Base-Emitter Saturation Voltage I CS=0.8A, IB=0.08A TC=25°C0 . 8 1 . 0 V TC=125°C 0.65 0.9 V IC=2A, IB=0.4A T C=25°C0 . 9 1 . 0 V TC=125°C0 . 8 0 . 9 V Cib Input Capacitance V EB=10V, IC=0.5A, f=1MHz 550 750 pF Cob Output Capacitance V CB=10V, IE=0, f=1MHz 60 100 pF fT Current Gain Bandwidth Product I C=0.5A,VCE=10V 11 MHz VF Diode Forward Voltage I F=1A, IC=1mA, IE=0 TC=25°C 0.86 1.3 V TC=125°C0 . 7 9 V IF=2A T C=25°C 0.95 1.5 V TC=125°C0 . 8 8 V tfr Diode Froward Recvery Time (di/dt=10A/µs) IF=0.4A IF=1A IF=2A 460 360 325 ns ns ns V CE(DSAT) Dynamic Saturation Voltage I C=1A, IB1=100mA VCC=300V at 1 µs TC=25°C8 V TC=125°C1 5 V IC=1A, IB1=100mA VCC=300V at 3 µs TC=25°C2 . 9 V TC=125°C8 V IC=2A, IB1=400mA VCC=300V at 1 µs TC=25°C9 V TC=125°C1 7 V IC=2A, IB1=400mA VCC=300V at 3 µs TC=25°C1 . 9 V TC=125°C8 . 5 V

©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338D/KSC5338DW Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min Typ. Max. Units RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40µs) tON Turn ON Time I C=2.5A, IB1=500mA IB2=1A, VCC=250V, RL = 100Ω 500 750 ns tSTG Storage Time 1.2 1.5 µs tF Fall Time 100 200 ns tON Turn ON Time I C=2A, IB1=400mA IB2=1A, VCC=300V RL = 150Ω TC=25°C 100 150 ns TC=125°C 150 ns tSTG Storage Time T C=25°C1 . 4 2 . 2 µs TC=125°C1 . 7 µs tF Fall Time T C=25°C 90 150 ns TC=125°C 150 ns tON Turn ON Time I C=2.5A, IB1=500mA IB2=5mA, VCC=300V RL = 120Ω TC=25°C 120 150 ns TC=125°C 150 ns tSTG Storage Time T C=25°C1 . 8 2 . 1 µs TC=125°C2 . 6 µs tF Fall Time T C=25°C 110 150 ns TC=125°C 160 ns INDUCTIVE LOAD SWITCHING (V CC=15V) tSTG Storage Time I C=2.5A, IB1=500mA IB2=0.5A, VZ=350V LC=300µH TC=25°C1 . 9 2 . 2 µs TC=125°C2 . 4 µs tF Fall Time T C=25°C 160 200 ns TC=125°C 330 ns tC Cross-over Time T C=25°C 350 500 ns TC=125°C 750 ns tSTG Storage Time I C=2A, IB1=400mA IB2=0.4A, VZ=300V LC=200µH TC=25°C 1.95 2.25 µs TC=125°C2 . 9 µs tF Fall Time T C=25°C 120 150 ns TC=125°C 270 ns tC Cross-over Time T C=25°C 300 450 ns TC=125°C 700 ns tSTG Storage Time I C=1A, IB1=100mA IB2=0.5A, VZ=300V LC=200µH TC=25°C0 . 6 0 . 8 µs TC=125°C1 . 0 µs tF Fall Time T C=25°C7 0n s TC=125°C1 1 0 n s tC Cross-over Time T C=25°C 80 130 ns TC=125°C 170 ns

1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 1.30 ±0.10 1.30+0.10 –0.05 0.50+0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220 Package Demensions ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338D/KSC5338DW Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. E TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E 2CMOS™ FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.