2SC5319 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm @ Low Noise Figure : NF=1.3dB (f=2GHz) 2isot 1.2540.4 © High Gain :Ga=11.54B (f=2GHz) ee MAXIMUM RATINGS (Ta = 25°C) .| | 4 Hi 8] 5 So 2 3 Collector-Base Voltage Vcpso | 8 | V | CH I Collector-Emitter Voltage VCEO oe 5 [Base Current | wT tm 3 Collector Power Dissipation é 1, 3. EMITTER Storage Temperature Range —55~125 2. BASE Marking USQ 4. COLLECTOR Type Name TOSHIBA 2-2K1A a Weight : 0.006g MICROWAVE CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | aa. | rye. [wax. [unr] VoE=aV, Ig=i5mA [as [a6 | — | om | . . Sorel? (D) [Vom=3V, Ic=15mA, f=1GHz [145] 17[ — | Insertion Gain Sarel*(2) [VoR=3V, Io=15ma, f=2GHe | 8.6 | 115 | — | =3V, Ig=5mA, f= 16h NF(2)_|Vop=8V, I¢=5mA, f=2GHz | — | 13] 22 | ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | xan. | rye. Max. [unr] Collector Cut-off Current Vop=i0V, Tao [—[—[ 7 [ea] Emitter Cutoff Current Vep=1V, Io=0 b= p= P ofa DC Current Gain Vop=8V, Ig=16mA | 60 | — | 260] v | Output Capacitance Vop=2.5V, Ig=0, f=1MHz | — | 0.6 | — | pF | Reverse Transfer Capacitance ote) — | 04 | — [oF | (Note) : Cre is measured by 3 terminal method with Capacitance Bridge. CAUTION : This device electrostatic sensitivity. Please handle with caution.
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@ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utliing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA. products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property Or other rights of the third parties which may result from Its use. ‘No license Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-08-30 1/4
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TOSHIBA 2$C5319 S-PARAMETER ZQ=5001, Ta=25°C VceE =3V, Ic=1mA f S11 $21 $12 $22 Vee =3V, Ic=3mA f S11 $21 $12 $22 1997-08-30 3/4
TOSHIBA 2$C5319 Vce=3V, Ic=5mA f S11 $21 $12 $22 9997-08-30 44