KSC5305D FAIRCHILD | Alldatasheet

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©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5305D NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Thermal Characteristics TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage 800 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 12 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation(TC=25°C) 75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Characteristics Rating Unit Rθjc Thermal Resistance Junction to Case 1.65 °C/W Rθja Junction to Ambient 62.5 KSC5305D High Voltage High Speed Power Switch Application

  • Built-in Free-wheeling Diode makes efficient anti saturation operation
  • Suitable for half bridge light ballast Applications
  • No need to interest an hFE value because of low variable storage-time spread even though corner spirit product
  • Low base drive requirement 1.Base 2.Collector 3.Emitter

1 TO-220

C B E Equivalent Circuit

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5305D Electrical Characteristics TC=25°C unless otherwise noted *Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10% Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage I C=1mA, IE=0 800 - - V BVCEO Collector-Emitter Breakdown Voltage I C=5mA, IB=0 400 - - V BVEBO Emitter Cut-off Current I E=1mA, IC=0 12 - - V ICBO Collector Cut-off Current V CB=500V, IE=0 - - 10 µA IEBO Emitter Cut-off Current V EB = 9V, IC = 0 - - 10 µA hFE1 hFE2 DC Current Gain V CE=1V, IC=0.8A VCE=1V,IC=2A VCE(sat) Collector-Emitter Saturation Voltage I C=0.8A, IB=0.08A IC=2A, IB=0.4A 0.4 0.5 V V VBE(sat) Base-Emitter Saturation Voltage I C=0.8A, IB=0.08A IC=2A, IB=0.4A 1.0 1.0 V V Cob Output Capacitance VCB = 10V, f=1MHz - - 75 pF tON Turn ON Time V CC=300V, IC =2A IB1 = 0.4A, IB2=-1A RL = 150Ω - - 150 ns tSTG Storage Time - - 2 µs tF Fall Time - - 0.2 µs tSTG Storage Time V CC=15V,VZ=300V IC = 2A,IB1 = 0.4A IB2 = -0.4A, LC=200µH - - 2.25 µs tF Fall Time - - 150 ns VF Diode Forward Voltage I F = 1A IF = 2A 1.5 1.6 V V trr * Reverse recovery time (di/dt = 10A/µs) IF = 0.4A IF = 1A IF = 2A 800 1.4 1.9 ns µs µs

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5305D Dimensions in Millimeters 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 1.30 ±0.10 1.30+0.10 –0.05 0.50+0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: ©2001 Fairchild Semiconductor Corporation Rev. H3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET VCX™ STAR*POWER is used under license