C527EZ600-0012-2

C450EZ600-0209-2 MARKTECH | Alldatasheet

Document overview

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Technical content

Subject to change without notice. www.cree.com

FEATURES

• EZBright Power Chip LED RF Performance – 450 & 460 nm - 200 mW min. – 527 nm - 60 mW min.
• Lambertian Radiation
• Conductive Epoxy, Solder Paste or Preforms, or Flux Eutectic Attach
• Low Forward Voltage – 3.5 V Typical at 350 mA
• Single Wire Bond Structure
• Maximum DC Forward Current - 400 mA
• Dielectric Passivation Across Epi Surface

APPLICATIONS

• General Illumination – Automobile – Aircraft – Decorative Lighting – Task Lighting – Outdoor Illumination
• White LEDs
• Crosswalk Signals
• Backlighting Cree® EZ600™ Gen II LED Data Sheet CxxxEZ600-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. CxxxEZ600-Sxx000-2 Chip Diagram Top View Bottom View EZBright LED Chip 580 x 580 μm2 t = 170 μm Backside Metallization Gold Bond Pad 130 x 130 μm2 Die Cross Section Anode (+); 3 μm AuSn Cathode (-) D ata Sheet: CPR3EE Rev A Dielectric Passivation

Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc. 2 CPR3EE Rev. A Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at TA = 25°C Note 1 CxxxEZ600-Sxx000-2 DC Forward Current 400 mA Peak Forward Current 600 mA Note 3 LED Junction Temperature 145°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +120°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Note 2 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) C450EZ600-Sxx00-2 3.1 3.5 4.1 2 20 C460EZ600-Sxx00-2 3.1 3.5 4.1 2 21 C527EZ600-Sxx00-2 3.1 3.5 4.1 2 35 Mechanical Specifications CxxxEZ600-Sxx000-2 Description Dimension Tolerance P-N Junction Area (μm) 550 x 550 ±40 Chip Area (μm) 580 x 580 ±40 Chip Thickness (μm) 170 ±25 Top Au Bond Pad (μm) 130 x 130 ±15 Au Bond Pad Thickness (μm) 3.0 ±1.0 Back Contact Metal Area (μm) 580 x 580 ±40 Back Contact Metal Thickness (μm) 3.0 ±1.0 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. 3. This peak forward current specification is based on a 400 ms pulse width at a 1/5-duty cycle with a junction temperature of 65°C. 4. Specifications are subject to change without notice.

Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc. 3 CPR3EE Rev. A Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxEZ600-Sxx000-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ600-Sxx000-2) orders may be filled with any or all bins (CxxxEZ600-0xxx-2) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C450EZ600-S20000-2 C450EZ600-0209-2 C450EZ600-0210-2 C450EZ600-0211-2 C450EZ600-0212-2 C450EZ600-0205-2 C450EZ600-0206-2 C450EZ600-0207-2 C450EZ600-0208-2 C450EZ600-0201-2 C450EZ600-0202-2 C450EZ600-0203-2 C450EZ600-0204-2 280 240 200 Dominant Wavelength (nm) Radiant Flux (mW) 447.5 450 452.5445 455 C460EZ600-S20000-2 C460EZ600-0209-2 C460EZ600-0210-2 C460EZ600-0211-2 C460EZ600-0212-2 C460EZ600-0205-2 C460EZ600-0206-2 C460EZ600-0207-2 C460EZ600-0208-2 C460EZ600-0201-2 C460EZ600-0202-2 C460EZ600-0203-2 C460EZ600-0204-2 280 240 200 Dominant Wavelength (nm) Radiant Flux (mW) 457.5 460 462.5455 465 C527EZ600-S06000-2 C527EZ600-0017-2 C527EZ600-0018-2 C527EZ600-0019-2 C527EZ600-0014-2 C527EZ600-0015-2 C527EZ600-0016-2 C527EZ600-0011-2 C527EZ600-0012-2 C527EZ600-0013-2 C527EZ600-0008-2 C527EZ600-0009-2 C527EZ600-0010-2 C527EZ600-0005-2 C527EZ600-0006-2 C527EZ600-0007-2 520 525 530 535 140 120 100 Dominant Wavelength (nm) Radiant Flux (mW)

Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc. 4 CPR3EE Rev. A Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the EZ600 LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. 25% 50% 75% 100% 125% 0 50 100 150 200 250 300 350 400 Relative Intensity If (mA) Relative Intensity vs. Forward Current 0 50 100 150 200 250 300 350 400 DW Shift (nm) If (mA) Wavelength Shift vs. Forward Current 25% 50% 75% 100% 125% 0 50 100 150 200 250 300 350 400 Relative Intensity If (mA) Relative Intensity vs. Forward Current 0 50 100 150 200 250 300 350 400 DW Shift (nm) If (mA) Wavelength Shift vs. Forward Current 100 150 200 250 300 350 400 0 1 2 3 4 5 If (mA) Vf (V) Forward Current vs. Forward Voltage 65% 70% 75% 80% 85% 90% 95% 100% 105% 110% 25 50 75 100 125 150 Relative Light Intensity Junction Temperature (°C) Relative Light Intensity Vs Junction Temperature 25 50 75 100 125 150 Dominant Wavelength Shift (nm) Junction Temperature (°C) Dominant Wavelength Shift Vs Junction Temperature 65% 70% 75% 80% 85% 90% 95% 100% 105% 110% 25 50 75 100 125 150 Relative Light Intensity Junction Temperature (°C) Relative Light Intensity Vs Junction Temperature 25 50 75 100 125 150 Dominant Wavelength Shift (nm) Junction Temperature (°C) Dominant Wavelength Shift Vs Junction Temperature -0.600 -0.500 -0.400 -0.300 -0.200 -0.100 0.000 0.100 25 50 75 100 125 150 Voltage Shift (V) Junction Temperature (°C) Voltage Shift Vs Junction Temperature

Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc. 5 CPR3EE Rev. A Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip.