C450EZ500-0213-2 MARKTECH | Alldatasheet

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Technical content

Subject to change without notice. www.cree.com

FEATURES

  • EZBright Power Chip LED Rf Performance – 110 mW min. @ 150 mA – 450 & 460 nm – 90 mW min. @ 150 mA - 470 nm – 40 mW min. @ 150 mA - 527 nm
  • Lambertian Radiation
  • Conductive Epoxy, Solder Paste or Preforms, or Flux Eutectic Attach
  • Low Forward Voltage – 3.4 V Typical at 150 mA
  • Single Wire Bond Structure
  • Maximum DC Forward Current - 300 mA
  • Dielectric Passivation Across Epi Surface

APPLICATIONS

  • General Illumination – Automobile – Aircraft – Decorative Lighting – Task Lighting – Outdoor Illumination
  • White LEDs
  • Crosswalk Signals
  • Television Backlighting Cree® EZ500™ Gen II LED Data Sheet CxxxEZ500-Sxxx00-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. CxxxEZ500-Sxxx00-2 Chip Diagram Top View Bottom View EZBright LED Chip 480 x 480 μm2 t = 170 μm Backside Metallization Gold Bond Pad 130 x 130 μm2 Die Cross Section Anode (+); 3 μm AuSn Cathode (-) D ata Sheet: CPR3EB Rev. -

Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc. 2 CPR3EB Rev. - Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at TA = 25°C Note 1 CxxxEZ500-Sxxx00-2 DC Forward Current 300 mA Peak Forward Current 400 mA Note 3 LED Junction Temperature 145°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +120°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 150 mA Note 2 Part Number Forward Voltage (VF, V) Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) C450EZ500-Sxxx00-2 3.1 3.4 4.1 2 19 C460EZ500-Sxxx00-2 3.1 3.4 4.1 2 20 C470EZ500-Sxxx00-2 3.1 3.4 4.1 2 23 C527EZ500-Sxxx00-2 3.1 3.5 4.1 2 35 Mechanical Specifications CxxxEZ500-Sxxx00-2 Description Dimension Tolerance P-N Junction Area (µm) 450 x 450 ±40 Chip Area (µm) 480 x 480 ±40 Chip Thickness (µm) 170 ±25 Top Au Bond Pad Diameter (µm) 130 x 130 ±15 Au Bond Pad Thickness (µm) 3.0 ±1.0 Back Contact Metal Area (µm) 480 x 480 ±40 Back Contact Metal Thickness (µm) 3.0 ±1.0 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 150 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. 3. This peak forward current specification is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of 65°C.

Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc. 3 CPR3EB Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxEZ500-Sxxx00-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ500-Sxxx00-2) orders may be filled with any or all bins (CxxxEZ500-0xxx-2) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 150 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C450EZ500-S11000-2 C450EZ500-0213-2 C450EZ500-0214-2 C450EZ500-0215-2 C450EZ500-0216-2 C450EZ500-0209-2 C450EZ500-0210-2 C450EZ500-0211-2 C450EZ500-0212-2 C450EZ500-0205-2 C450EZ500-0206-2 C450EZ500-0207-2 C450EZ500-0208-2 150 mW 130 mW 110 mW Dominant Wavelength Radiant Flux 447.5 nm 450 nm 452.5 nm445 nm 455 nm C460EZ500-S11000-2 C460EZ500-0213-2 C460EZ500-0214-2 C460EZ500-0215-2 C460EZ500-0216-2 C460EZ500-0209-2 C460EZ500-0210-2 C460EZ500-0211-2 C460EZ500-0212-2 C460EZ500-0205-2 C460EZ500-0206-2 C460EZ500-0207-2 C460EZ500-0208-2 150 mW 130 mW 110 mW Dominant Wavelength Radiant Flux 457.5 nm 460 nm 462.5 nm455 nm 465 nm C470EZ500-S09000-2 C470EZ500-0209-2 C470EZ500-0210-2 C470EZ500-0211-2 C470EZ500-0212-2 C470EZ500-0205-2 C470EZ500-0206-2 C470EZ500-0207-2 C470EZ500-0208-2 C470EZ500-0201-2 C470EZ500-0202-2 C470EZ500-0203-2 C470EZ500-0204-2 130 mW 110 mW 90 mW Dominant Wavelength Radiant Flux 467.5 nm 470 nm 472.5 nm465 nm 475 nm C527EZ500-S3000-2 C527EZ500-0207-2 C527EZ500-0208-2 C527EZ500-0209-2 C527EZ500-0204-2 C527EZ500-0205-2 C527EZ500-0206-2 C527EZ500-0201-2 C527EZ500-0202-2 C527EZ500-0203-2 60 mW 45 mW 30 mW Dominant Wavelength Radiant Flux 525 nm 530 nm 535 nm520 nm

Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc. 4 CPR3EB Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the EZBright500. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. 25% 50% 75% 100% 125% 150% 175% 0 50 100 150 200 250 300 350 Relative Intensity If (mA) Relative Intensity vs. Forward Current 0 50 100 150 200 250 300 350 DW Shift (nm) If (mA) Wavelength Shift vs. Forward Current 100 150 200 250 300 0 1 2 3 4 5 If (mA) Vf (V) Forward Current vs. Forward Voltage 25% 50% 75% 100% 125% 150% 175% 0 50 100 150 200 250 300 350 Relative Intensity If (mA) Relative Intensity vs. Forward Current 0 50 100 150 200 250 300 350 DW Shift (nm) If (mA) Wavelength Shift vs. Forward Current Mean(Vf Shift) -0.600 -0.500 -0.400 -0.300 -0.200 -0.100 0.000 0.100 25 50 75 100 125 150 Voltage Shift (V) Junction Temperature (°C) Voltage Shift vs Junction Temperature Mean(Vf Shift) EZ400 65% 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 Relative Light Intensity Junction Temperature (°C) Relative Light Intensity vs Junction Temperature 25 50 75 100 125 150 Dominant Wavelength Shift (nm) Junction Temperature (°C) Dominant Wavelength Shift vs Junction Temperature Mean(Vf Shift) EZ400 65% 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 Relative Light Intensity Junction Temperature (°C) Relative Light Intensity vs Junction Temperature 25 50 75 100 125 150 Dominant Wavelength Shift (nm) Junction Temperature (°C) Dominant Wavelength Shift vs Junction Temperature

Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc. 5 CPR3EB Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip.