C527EZ1000-0205-2

C450EZ1000-0221-2 MARKTECH | Alldatasheet

Document overview

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Technical content

Subject to change without notice. www.cree.com CxxxEZ1000-Sxx000-2 Chip Diagram

FEATURES

• EZBright LED Technology » 380 mW min. – 450 nm » 360 mW min. – 460 nm » 110 mW min. – 527 nm
• Lambertian Radiation
• Conductive Epoxy, Solder Paste or Preforms, or Flux Eutectic Attach
• Low Forward Voltage
• Dielectric Passivation across Epi Surface

APPLICATIONS

• General Illumination » Aircraft » Decorative Lighting » Task Lighting » Outdoor Illumination
• White LEDs
• LCD Backlighting
• Projection Displays
• Automotive Cree® EZ1000™ Gen II LEDs Data Sheet CxxxEZ1000-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for high- intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications such as general illumination, automotive lighting, and LCD backlighting. D ata Sheet: CPR3EC Rev. A Top View Bottom View Die Cross Section EZBright LED 980 x 980 μm2 Gold Bond Pads (2) 150 x 150 μm2 Cathodes (-) t = 170 μm Anode (+) 3 μm AuSn Backside Metalization Dielectric Passivation

Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. 2 CPR3EC Rev. A Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Maximum Ratings at TA = 25°C Note 1, 2 & 3 CxxxEZ1000-Sxx000-2 DC Forward Current 1000 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1250 mA LED Junction Temperature 150°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +125°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Note 2 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) C450EZ1000-Sxx000-2 2.9 3.2 3.8 2 20 C460EZ1000-Sxx000-2 2.9 3.2 3.8 2 21 C527EZ1000-Sxx000-2 3.0 3.4 4.0 2 35 Mechanical Specifications CxxxEZ1000-Sxx000-2 Description Dimensions Tolerance P-N Junction Area (μm) 950 x 950 ± 35 Chip Area (μm) 980 x 980 ± 35 Chip Thickness (μm) 170 ± 25 Top Au Bond Pad (μm) - Qty. 2 150 x 150 ± 25 Au Bond Pad Thickness (μm) 3.0 ± 1.5 Back Contact Metal Area (μm) 980 x 980 ± 35 Back Contact Metal Thickness (μm) 3.0 ± 1.5 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT package without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an integrating sphere using Illuminance E. 3. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 200 400 600 800 1000 1200 25 50 75 100 125 150 175 Maximum Forward Current (mA) Ambient Temperature (˚C) Rth j-a = 10 °C/W Rth j-a = 15 °C/W Rth j-a = 20 °C/W Rth j-a = 25 °C/W

Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. 3 CPR3EC Rev. A Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Standard Bins for CxxxEZ1000-Sxx000-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ1000-Sxx000-2) orders may be filled with any or all bins (CxxxEZ1000-0xxx-2) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C450EZ1000-S38000-2 C450EZ1000-0221-2 C450EZ1000-0222-2 C450EZ1000-0223-2 C450EZ1000-0224-2 C450EZ1000-0217-2 C450EZ1000-0218-2 C450EZ1000-0219-2 C450EZ1000-0220-2 C450EZ1000-0213-2 C450EZ1000-0214-2 C450EZ1000-0215-2 C450EZ1000-0216-2 C450EZ1000-0209-2 C450EZ1000-0210-2 C450EZ1000-0211-2 C450EZ1000-0212-2 C450EZ1000-0205-2 C450EZ1000-0206-2 C450EZ1000-0207-2 C450EZ1000-0208-2 460 mW 440 mW 420 mW 400 mW 380 mW Dominant Wavelength Radiant Flux 447.5 nm 450 nm 452.5 nm 455 nm445 nm C460EZ1000-S36000-2 C460EZ1000-0221-2 C460EZ1000-0222-2 C460EZ1000-0223-2 C460EZ1000-0224-2 C460EZ1000-0217-2 C460EZ1000-0218-2 C460EZ1000-0219-2 C460EZ1000-0220-2 C460EZ1000-0213-2 C460EZ1000-0214-2 C460EZ1000-0215-2 C460EZ1000-0216-2 C460EZ1000-0209-2 C460EZ1000-0210-2 C460EZ1000-0211-2 C460EZ1000-0212-2 C460EZ1000-0205-2 C460EZ1000-0206-2 C460EZ1000-0207-2 C460EZ1000-0208-2 C460EZ1000-0201-2 C460EZ1000-0202-2 C460EZ1000-0203-2 C460EZ1000-0204-2 460 mW 440 mW 420 mW 400 mW 380 mW 360 mW Dominant Wavelength Radiant Flux 457.5 nm 460 nm 462.5 nm 465 nm455 nm C527EZ1000-S11000-2 C527EZ1000-0213-2 C527EZ1000-0214-2 C527EZ1000-0215-2 C527EZ1000-0210-2 C527EZ1000-0211-2 C527EZ1000-0212-2 C527EZ1000-0207-2 C527EZ1000-0208-2 C527EZ1000-0209-2 C527EZ1000-0204-2 C527EZ1000-0205-2 C527EZ1000-0206-2 C527EZ1000-0201-2 C527EZ1000-0202-2 C527EZ1000-0203-2 190 mW 170 mW 150 mW 130 mW 110 mW Dominant Wavelength Radiant Flux 525 nm 530 nm 535 nm520 nm

Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. 4 CPR3EC Rev. A Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Characteristic Curves These are representative measurements for the EZBright 1000. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. 50% 100% 150% 200% 250% 300% 0 250 500 750 1000 1250 Relative Intensity If (mA) Relative Intensity vs. Forward Current -12 0 250 500 750 1000 1250 DW Shift (nm) If (mA) Wavelength Shift vs. Forward Current 50% 100% 150% 200% 250% 300% 0 250 500 750 1000 1250 Relative Intensity If (mA) Relative Intensity vs. Forward Current -12 0 250 500 750 1000 1250 DW Shift (nm) If (mA) Wavelength Shift vs. Forward Current 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 If (mA) Vf (V) Forward Current vs. Forward Voltage -0.600 -0.500 -0.400 -0.300 -0.200 -0.100 0.000 0.100 25 50 75 100 125 150 Voltage Shift (V) Junction Temperature (°C) Voltage Shift vs. Junction Temperature 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 If (mA) Vf (V) Forward Current vs. Forward Voltage -0.600 -0.500 -0.400 -0.300 -0.200 -0.100 0.000 0.100 25 50 75 100 125 150 Voltage Shift (V) Junction Temperature (°C) Voltage Shift vs. Junction Temperature 25 50 75 100 125 150 Dominant Wavelength Shift (nm) Junction Temperature (°C) Wavelength Shift vs. Junction Temperature 65% 70% 75% 80% 85% 90% 95% 100% 105% 110% 25 50 75 100 125 150 Relative Light Intensity Junction Temperature (°C) Relative Intensity vs. Junction Temperature 25 50 75 100 125 150 Dominant Wavelength Shift (nm) Junction Temperature (°C) Wavelength Shift vs. Junction Temperature 65% 70% 75% 80% 85% 90% 95% 100% 105% 110% 25 50 75 100 125 150 Relative Light Intensity Junction Temperature (°C) Relative Intensity vs. Junction Temperature

Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. 5 CPR3EC Rev. A Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip.