C5241

2SC5241 SHINDENGEN | Alldatasheet

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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd RATINGS SHINDENGEN OUTLINE DIMENSIONS Unit : mm Case : FTO-220 5A NPN 2SC5241 FX SeriesSwitching Power Transistor

• Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 ～150 ℃ Junction Temperature Tj 150 ℃ Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage VEBO 7V Collector Current DC IC 5A Collector Current Peak ICP 10 Base Current DC IB 2 A Base Current Peak IBP 4 Total Transistor Dissipation PT 30 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque) 0.5(0.3) N･m
• Electrical Characteristics (Tc=25℃) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.1A Min 450 V Collector Cutoff Current ICBO rated VCBO Max 0.1 mA ICEO rated VCEO Max 0.1 Emitter Cutoff Current IEBO rated VEBO Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 2.5A Min 10 hFEL VCE = 5V, IC = 1mA Min 5 Collector to Emitter Saturation Voltage VCE(sat) IC = 2.5A Max 1.0 V Base to Emitter Saturation Voltage VBE(sat) IB = 0.5A Max 1.5 V Thermal Resistance θjc Junction to case Max 4.16 ℃/W Transition Frequency fT VCE = 10V, IC = 0.5A STD 20 MHz Turn on Time ton IC = 2.5A Max 0.5 Storage Time ts IB1 = 0.5A, IB2 = 1A Max 2.0 μs Fall Time tf RL = 60Ω, VBB2 = 4V Max 0.2

0.001 0.01 0.1 1 10 0.05 0.50.2 20 5052 200 500 2000 5000 VCE = 5V Tc = 150°C 100°C 50°C 25°C 0°C −25°C −55°C Collector Current I C [A] DC Current Gain hFE

0.5 1.5 2.5 2SC5241 0.01 0.1 1 0.5 1.5 2.5 0.05 0.50.2 20 5052 200 500 2000 5000 IC = 0.5A 1.25A 2.5A 5A 10A Tc = 25°C Saturation Voltage IC = 0.5A 1.25A 2.5A 10A Base Current IB [A] Collector-Emitter Voltage VCE [V] Base-Emitter Voltage VBE [V]

0.01 0.1 0 1 2 3 4 5 2SC5241 IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 150V Tc = 25°C ts ton tf Switching Time - I C Collector Current I C [A] Switching Time tSW [µs]

0.01 0.1 0 50 100 150 200 250 300 2SC5241 IC = 2.5A IB1 = 0.5A IB2 = 1.0A VBB2 = 4V Tc = 25°C ts ton tf Switching Time - VCC Collector Voltage VCC [V] Switching Time tSW [µs]

0.01 0.1 0 50 100 150 2SC5241 IC = 2.5A IB1 = 0.5A IB2 = 1.0A VBB2 = 4V RL = 60Ω ts ton tf Switching Time - Tc Case Temperature Tc [ °C] Switching Time tSW [µs]

0.01 0.1 0 1 2 3 4 5 2SC5241 IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 25°C ts tf + tvs tf L-Load Switching Time - I C Switching Time tSW [µs] Collector Current I C [A]

0.01 0.1 0 1 2 3 4 5 2SC5241 IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 100°C ts tf + tvs tf L-Load Switching Time - I C (At High Temperature) Switching Time tSW [µs] Collector Current I C [A]

Transient Thermal Impedance 0.01 0.1 2SC5241 10-4 10-3 10-2 10-1 100 101 102 0.05 0.50.2 20 5052 200 500 2000 5000 Time t [s] Transient Thermal Impedance θjc(t) [°C/W]

0.01 0.1 1 10 100 2SC5241 50µs Tc = 25°C Single Pulse 150µs1ms10ms DC 450 Collector-Emitter Voltage V CE [V] Collector Current I C [A] PT limit IS/B limit

2SC5241 Collector Current Derating Collector Current Derating [%] VCE = fixed PT limit IS/B limit Case Temperature Tc [ °C]

IB1 = 0.3IC IB2 = 1.5A VBB2 = 5V Tc < 150°C Reverse Bias SOA Collector-Emitter Voltage V CE [V] Collector Current I C [A]