C5200N THINKISEMI | Alldatasheet
Document overview
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Technical content
DESCRIPTION
- With TO-3PN-SQ package
- Complement to type A1943N
APPLICATIONS
- Power amplifier applications
- Recommended for 100W high fidelity audio frequency amplifier output stage Pb Free Plating Product C5200N THINKI 150 Watt Silicon Epitaxial Planar NPN Power Transistor Pb B C E C5200N © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/4Rev.12T Parameter Symbol Rating Unit Collector to Base Voltage V CBO Collector to Emitter Voltage V CEO Emitter to Base Voltage V EBO Collector Current - Continuous I C Peak Collector Current I CP Base Current I B Collector Power Dissipation P C(TC=25 )℃ 150 W Junction Temperature T j 150 ℃ Storage Temperature Range T stg -55～150 ℃ ℃) Absolute Maximum Ratings(Ta=25 Base Collector Emitter PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
1.5 A Fig.1 simplified outline(TO-3PN-SQ) and symbol
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/4Rev.12T Electrical Characteristics(Ta=25 N o t e : ℃, Time:60~90sec. ±5℃, Duration:5±0.5sec. Cooling Speed: 2~10℃/sec. ℃ Time:10±1 sec Temperature Profile for Dip Soldering(Pb-Free) 1.Preheating:25~150 2.Peak Temp.:255 Temp.:270±5 Resistance to Soldering Heat Test Conditions Parameter Symbol Test Conditions Min Typ Max Unit Collector to Emitter Breakdown V oltage V CEO I C =50mA I E =0 230 V Collector Cut-Off Current I CBO V CB =230V I E =0 5 μA Emitter Cut-Off Current I EBO V EB =5.0V I C =0 5 μA DC Current Gain h FE(1) V CE =5.0V I C =1.0A 55 160 h FE(2) V CE =5.0V I C =7.0A 35 60 Collector to Emitter Saturation V oltage V CE(sat) I C =8.0A I B =0.8A 0.4 3.0 V Base to Emitter Voltage V BE V CE =5.0V I C =7.0A 1.0 1.5 V Transition Frequency f T I C =1.0A V CE =5.0V 30 MHz Collector output capacitance C ob V CB =10V I E f=1.0MHz 200 pF C5200N
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/4Rev.12T Electrical Characteristic Curve C5200N
Package Information
Symbol Dimensions(millimeters) Min. Max. A 4.60 5.00 A1 1.30 1.70 A2 2.20 2.60 b 0.80 1.20 b1 2.90 3.30 b2 1.90 2.30 c 0.40 0.80 e 5.25 5.65 E 15.3 15.7 E1 13.2 13.6 E2 13.1 13.5 E3 9.10 9.50 H 19.7 20.1 H1 19.1 20.1 H2 18.3 18.7 H3 2.80 3.20 G 4.80 5.20 ФP 3.00 3.40 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/4Rev.12T C5200N