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UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R214-005, B POWER AMPLIFIER
APPLICATIONS
FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Order Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tube
2SC5200 NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 2 1 4 - 0 0 5 , B ABSOLUTE MAXIMUM RATING (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 230 V Collector-Emitter Voltage V CEO 230 V Emitter-Base Voltage V EBO 5 V Collector Current I C 15 A Base Current I B 1.5 A Collector Power Dissipation (TC=25°C) P C 150 W Junction Temperature T J 150 °C Storage Temperature Range T STG -55 ~ 150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage V (BR) CEO I C= 50mA, IB=0 230 V Collector-Emitter Saturation Voltage V CE(SAT) I C= 8A, IB= 0.8A 0.4 3.0 V Base -Emitter Voltage V BE V CE= 5V, IC= 7A 1.0 1.5 V Collector Cut-off Current I CBO V CB = 230V, IE=0 5.0 μA Emitter Cut-off Current I EBO V EB= 5V, IC=0 5.0 μA DC Current Gain hFE1 V CE= 5V, IC= 1A 55 160 hFE2 V CE= 5V, IC= 7A 35 60 Transition Frequency f T V CE= 5V, IC= 1A 30 MHz Collector Output Capacitance C OB V CB= 10V, IE=0, f=1MHz 200 pF CLASSIFICATION OF hFE1 RANK R O Range 55 ~ 110 80 ~ 160
2SC5200 NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 2 1 4 - 0 0 5 , B TYPICAL CHARACTERISTICS Collector Current, IC (A) Collector current, IC (A) 0.01 100 0.1 0.3 0.1 1 Collector-Emitter Saturation Voltage vs. Collector Current 0.03 0.01 -25 TC =100℃ COMMON EMITTER IC / IB = 10 0.01 100 100 300 0.1 1 -25 TC =100℃ COMMON EMITTER IC / IB = 10 Collector Current, IC (A) Collector-Emitter Saturation Voltage, VCE(sat) (V) Collector Current, IC (A) DC Current Gain, hFE DC Current Gain vs. Collector Current 3 1000 300 10 100 DC OPERATION TC =25°C 0.3 0.5 0.05 0.1 0.03 VCEO MAX. 1ms IC MAX. (PULSED) SINGLE NONREPETITIVE PULSE TC = 25°C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. IC MAX. (CONTINUOUS) Safe Operating Area 100ms Collector-Emitter Voltage, VCE (V) Collector current, IC (A) 10ms
2SC5200 NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 2 1 4 - 0 0 5 , B UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.