2STC5200 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 9
Technical content
Features
■ High breakdown voltage V CEO > 230V ■ Complementary to 2STA1943 ■ Fast-switching speed ■ Typical fT = 30 MHz Application ■ Audio power amplifier
Description
This device is a NPN transistor manufactured using new BiT -LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary
1 Electrical ratings
Table 2. Absolute maximum ratings Table 3. Thermal data
2 Electrical characteristics
Table 4. Electrical characteristics
- Pulsed: pulse duration = 300 µs, duty cycle < 1.5%
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve Figure 4. Output characteristics Figure 5. DC current gain Figure 6. Collector-emitter saturation voltage Figure 7. Collector current vs base-emitter
2.2 Test circuit
Figure 8. Resistive load switching test circuit
Package mechanical data 2STC5200
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
Dim. mm. Min. Typ Max. A4 . 805 . 2 0 A1 2.50 3.10 b 0.90 1.0 1.25 b1 2.5 b22 . 8 c 0.50 0.60 0. 85 D 25.6 26.4 E1 9.80 20.20 e5 . 1 5 5 . 7 5 L1 9.50 20.50 L1 2. 302 . 7 0 øP 3.55 3.65 TO-264 Mechanical data
4 Revision history
Table 5. Document revision history 19-Jun-2007 1 Initial release. 11-Dec-2007 2 Document promoted from preliminary data to datasheet.