2SC5129 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS 155205, 036203 , 30203 ae ye] | = S [oo] Fla e High Speed : tg = 0.15 ys (Typ.) ——|4 | ul © High Voltage : Vepo = 1500V LT] alg “13 e@ Low Saturation Voltage : VCE (sat) = 3 V (Max.) 10 V8 } neo e Collector Metal (Fin) is Fully Covered with Mold Resin 23maxt fl al 3 oes s MAXIMUM RATINGS (Ta = 25°C) 545 545 CHARACTERISTIC SYMBOL UNIT 83 Z| Collector-Base Voltage Vepo_| 1500 [| V |] ‘3123 4 Collector-Emitter Voltage VCEO [ 600 | Vv | a Emitter-Base Voltage =a ERO = Vv Sly cottector Collector Current Cc [| 10 | A 3. EMITTER | Pulse | Icp | 20 | JEDEC = Collector Power Dissipation P 50 w [eZ = (Te = 25°C) c TOSHIBA 2-16E3A Weight : 556 (Iyp) Storage Temperature Range —55~150 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xay. | rye. [max. [unr] Collector Cut-off Current IcBo Vos = 1500 V, In = 0 [— [—] 1] ma] Emitter Cut-off Current Tgpo__|VeB=5V, Ic =0 [| — | — | 10 | pA | Emitter-Base Breakdown nn bawcafcrnan n=» | =[-[ ¥ | ; bre @)_|Vou = 5V, 1g =A [to [= [30 | D © Current Gain nee @) [Von =5V,Ic=6A [«t—T 3] Collector-Emitter Saturation crs vermifecenieeis [= [=o] Base-Emitter Saturation min e=ennmien [| el ve Vop= IOV. Ig = 014 aad Collector Output Capacitance Vop =10V, Ip=0,f=1Mia | — | 130| — | oF | Switching | Storage Time Icp = 5A, Ipy (end) = 1A [— | 25; 407 Time_(Fig:) [Fall Time fi = 64 ie [= foster] “ 961 001EAAD @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or all due to their inherent electrical Sensivty and vulnerability to physical ses. i is the responsibilty of the buyer, when ulizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction oF failure of @ TOSHIBA product could cause lost of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ the information contained herein 's presented only as 9 guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1999-09-02 1/4
Fig.1 SWITCHING TIME TEST CIRCUIT (Inductive Load) IB Ic 2SK528 (Note)1.0 #H 4.7 uF a Ty TUT. 4 bs 3 ~ | 1002 50 wals oi = Fe & Ss > INPUT as & = oO }e, a ore s Py 0 a Ly = 180 «H 15.6 ys VDD Cy = 6800 pF voc (Note) : Leakage Inductance of secondary winding LB is 1.2 /H. BASE CURRENT 0 ave i i i 590% Icp COLLECTOR CURRENT i i i i i tstg i te Base Current Gradient Tpi + Ipa B tg “ 1999-09-02 2/4
TOSHIBA 28¢5129 Ic — VCE sw Vcr - IB 10) — ——= Ea [ep LEE ee HAA AAR 8. eS —— § COCA este. : Gee AI | 7 & IVA AN [| Ci gen — — 3 6 — 2 SOURCE ya a A \\ a A BOAR a 42 ae | CUNCEAEAPACCH § Pee] 2 CAVA NAT 8 pe coos COCOVCAE NUNS an 4 ao 2 RAEN ESS SS 0 2 4 6 8 10 0 04 08 12 16 2.0 24 COLLECTOR-EMITTER VOLTAGE VcE (V) BASE CURRENT Ip (A) hrE - Ic ~ Vcr - IB 10 haa = COMMON Ff rere eg OCC Pom | TE] 2 |] nt AN an z Cor I Fi \\ Ig=8A 6 ee ANT | 2 OPE E wl com NA S | Wee oo — TPAPCAL EYL
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=e CI @ | AAV VIALIN EE a 3 g 2| PTT Tn 8 CACC NC a 1S — i LUI ET TT 1] 2 DAYS Ss COLLECTOR CURRENT Ig (A) BASE CURRENT Ip (A) Ic - VBE - Vcr - IB “Comoxeurme | | | YLT © CTL Jeomaos = eroooeoAe gece o a c= = ic} g LL ke PELL € OOPIECEV EN cs) 6 S 6 Vind OO My 2 CUCICCCYEN PEA BOAR COC Pee oo 2 ‘OUICACTY NT § CO CUA ENTAG § TOO B COUCCAGNEAAE SS \\SSS00776000008 2 JO LKNSNSSs54 0 0.2 04 06 08 1.0 12 14 0 04 08 1.2 16 2.0 24 BASE-EMITTER VOLTAGE VpE (V) BASE CURRENT Ig (A) 1999-09-02 3/4
Tth (j-c) — tw Pc - Te 60) Te = 25°C (INFINTE HEAT SINK) [TTT TT Ty e CURVE SHOLD BE APPLIED IN THERMAL zg CE NT HEAT SINK e 50} x BS GINGLE NONREPRTITIVE PULSE) 2 “COTNEET TT TT TT TTT ge P N as Eee eg ee c S° FR i Be *CPCOEOP CLL Pa pesos sa ecieee asic mt eed E
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2% SINGLE NONREPETITIVE Vane SEEs| 50m] PULSE Ta = 25°C NN CURVES MUST BE DERATED XY 30m LINEARLY WITH INCREASE IN | TINT murmarene Nexo al 10m) 3 10 30 100 300 1000 COLLECTOR-EMITTER VOLTAGE VcE (V) 7999-09-02 4/4