C50IRF IRF | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
eR] Rectifier IRFPC50 HEXFET® Power MOSFET Dynamic dv/dt Rating © Repetitive Avalanche Rated D © Isolated Central Mounting Hole Vpss = 600V © Fast Switching © Ease of Paralleling s Rosvon) = 0-602 © Simple Drive Requirements
5 Ip=t1A
Description
Third Generation HEXFETs from Internationa! Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. wo The 10-247 package is preferred for commercial-industrial applications ey where higher power levels preclude the use of TO-220 devices. The TO-247 55 is similar but superior to the earlier TO-218 package because of its isolated RN mounting hole. It also provides greater creepage distance between pins to WANA meet the requirements of most safety specifications. \\ TO-247AC Absolute Maximum Ratings Parameter — Max _|_Units lp @ Tc =25°C __| Continuous Drain Current, Ves @ 10 V a Ip @ Tc = 100°C _| Continuous Drain Current, Vas @ 10 V 7.0 A tom. Pulsed Drain Current © 44 Pp @ Tc=25°C_| Power Dissipation 480 _| ow Linear Derating Factor _ 14 wee Gate-to-Source Voltage 20 Vv Eas Singlo Pulse Avalanche Energy @ Tae ‘Avalanche Current © 0. OCA Ear Repetitive Avalanche Energy © en ae dvidt Peak Diode Recovery dv/dt @ _ 3.0 Vins Tw Operating Junction and -55 to +150 Tste Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) | [Mounting Torque, 6-32 or M3 screw 10 Ibfsin (1.1 Nem) Thermal Resistance (TT Parameter Min. Typ. [Max [Units <unstion-to-Case — 06s Recs, Case-to-Sink, Flat, Greased Surface — 0.24 | = =Ciw Raya ____[dunction-to-Ambient = — | #0 1055
Electrical Characteristics @ Ty = 25°C (unless otherwise specified) [Parameter Min. | Typ. | Max.| Units | Test Conditions | [Wares | Drain-to-Souree Breakdown Votage | 600 | — | — | V_|Vas=0V,lo= 250A | | AVieninss/AT,] Breakdown Voltage Temp. Coetficient_ | — | 0.78 | — | vic [Reference to 25°C, l= 1mA_ | [Rosie __| Static Drain-to-Source On-Resistance | — [| — | 0.60 | a [Vas=10V, 1o=6.0A @ | [vese: [Gate TwestoléVotage a0 [Tao TY ea a | |g. (Forward Transconductance 5.7 [| — | — TS [Vos=100V, p=6.0A © [= [= J 100 | [ns [Drintoseucetestage cures [== on-| A see Vaso Taio | liste Sonos ate =] “* [ree ——— [Gate-to-Source Reverse Leakage | — | — 100] [Q, Total GateCharge 140 lo=11A —— ed Vos=360V [Gus | Gate-to-Drain (Miler) Charge | — 69 Vos=10V See Fig. 6 and 13. [tony [Tum-On DelayTime T= 18 Voo=300V [i RiseTime = a lo=t1A [ton [Tum-Off Delay Time TT a8 Fo6.20 fu TFalitime Tg Fip=300_See Figure 10 © from package E (ct ee | die contact i" Ves=0V ——— ed Vos=25V [Css Reverse Transfer Capacitance | — | 61 | = | f=1,0MHz See Figure 5 Source-Drain Ratings and Characteristics (Body Diode) ‘A. | showing the ((' i (Body Diode) © -n junction diode. s [Vso [Diode Forward Voltage | TT TV [625°C Ist 1A Ves O | cen | [Qn [Reverse Recovery Charge | — 39 | 59 TC |ist=100A/ys © Notes: @ Repetitive rating; pulse width limited by @ Isos11A, di/dts100A/us, VopsVieRjoss. max. junction temperature (See Figure 11) Tys150°C ® Vop=50V, starting Ty=25°C, L=13mH ® Pulse width < 300 us; duty cycle <2%. Fig=250, las=11A (See Figure 12) 1056
Eo mea mePeil fant ata ig yall om iH] | Z. > erro 2:54 pi mri) Annie “TH < Bil pat & so aa = él 2 SSS a 5 “SSA a
8 AR 3 ar
7 A A
La cone) fio : / To = 180°C Bi art 108 102 ars x0! 102 Ss Vps, Drain-to-Source Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, To=25°C To=150°C Poe 8 TTT a a _ hay 4anennnen Q 30 z A lit til ¢ £ ley feo » ZAR ge EEE 3° iy ® 1.8] 4 § (fet } tty TT} 22 “Cpr rr erry STE) Ae eee eee FSS RS] & cste-hee tT TTT ryt Pee) 3 VEEP race PRE Pete rs wom) | EE rer] Vas, Gate-to-Source Voltage (volts) Ty, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 1057
ec £ Jp | SSS s JP TAT Fe gs LTT TAT TT EKNGEESS 8 eA * 2 Y “PSS Pea Se a ee ee ee iP MLE Vee | Vos, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage ee fe nl 14 er oOMWe LL zed ° ERA SOE oo 3 [Te CCC) = SESS bette 8 CN
6 Eeeree eS “EHR See RS
# ee es | eT =150%° PE vs “of . Sees eee Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 1058
Ves DUT. 2 6 LT TTT tty yt I FA Noo as
7 CONE Jirov
—- -EPwT yy Buty Fars = CNS —— © ~ity Ke Fig 10a. Switching Time Test Circuit 6 “COPE EN ; @ (OPN Yos— _ ee ee © ~Tti ttt tN PEEEEEEE EN a .. 10%. it Tc, Case Temperature (°C) tyon) tao Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature : SSS Se ae a mai a 3 ed | | LF at a ec ee col 5 esse 8 ee ee ee agit cee eee ee ee ee 3 2, Za (ea eli ee LL fe cll wert AU o° ESE oe a SS & —Secc — eeaari meet fea cc A wo LLU TTI TTT 2s: set «te +r 10° 1o-* 10° 10°? On 1 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1059
L Vary tpto obtain YDS (i required las pur son a ’ “ONT TTT one Sod N Tit TT | Fig 12a. Unclamped inductive Test Circuit 3 EAA 9 12a, Unclamped inductive Tes 2 wo WX NAL TT TT Venoss 2 (NAAT ITT —F @ ool | YOST TTT Le UES o /bLZ » bate SS y, \\ ce ee) 7 \\ Starting Ty, Junction Temperature(*C) bs ———! aaa Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator Pr ~~ Same Type as DUT ' | oops) ier i i a a rr $ Qas ~~ Cap —y :) * Onn | Fig 13a. Basic Gate Charge Waveform Fig 13b, Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing — See page 1511 Appendix C: Part Marking Information - See page 1517 International eR] Rectifier 1060