2SC5088_07 TOSHIBA | Alldatasheet

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Technical content

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications

  • Low noise figure, high gain.
  • NF = 1.1dB, |S 21e|2 = 13dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 40 mA Collector current IC 80 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ⎯ GHz ⎪S21e⎪ (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ⎯ 18 ⎯ Insertion gain ⎪S21e⎪ (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 9.5 13 ⎯ dB NF (1) V CE = 10 V, IC = 5 mA, f = 500 MHz ⎯ 1 ⎯ Noise figure NF (2) VCE = 10 V, IC = 5 mA, f = 1 GHz ⎯ 1.1 2 dB Unit: mm 1.Emitter1 2.Collector 3.Emitter2 4.Base JEDEC ― JEITA ― TOSHIBA 2-2K1A Weight: 0.006 g (typ.) USQ

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 1 μA Emitter cut-off current IEBO V EB = 1 V, IC = 0 ⎯ ⎯ 1 μA DC current gain hFE (Note 1) VCE = 10 V, IC = 20 mA 80 ⎯ 240 Output capacitance Cob ⎯ 1.1 1.6 pF Reverse transfer capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz (Note 2) ⎯ 0.65 1.05 pF Note 1: h FE classification O: 80~160, Y: 120~240 Note 2: C re is measured by 3 terminal method with capacitance bridge. Marking Type name M C O 4 3 1 2 hFE rank

S-Parameter Z O = 50 Ω, Ta = 25°C VCE = 10 V, IC = 5 mA Frequency S11 S21 S12 S22 VCE = 10 V, IC = 20 mA Frequency S11 S21 S12 S22

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.