2SC5027_V01 TOSHIBA | Alldatasheet

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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC5027 High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Color TV Chroma Output Applications

  • High breakdown voltage: V CEO = 300 V
  • Small collector output capacitance: Cob = 3.0 pF (typ.)
  • Recommended for chroma output and driver applications for line-operated TV horizontal. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 300 V Collector-emitter voltage V CEO 300 V Emitter-base voltage V EBO 7 V Collector current I C 100 mA Base current I B 50 mA Collector power dissipation P C 1.3 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 240 V, IE = 0 ― ― 1.0 µA Emitter cut-off current I EBO V EB = 7 V, IC = 0 ― ― 1.0 µA hFE (1) V CE = 10 V, IC = 4 mA 20 ― ― DC current gain hFE (2) V CE = 10 V, IC = 20 mA 30 ― 200 Collector-emitter saturation voltage V CE (sat) IC = 10 mA, IB = 1 mA ― ― 1.0 V Base-emitter saturation voltage V BE (sat) I C = 10 mA, IB = 1 mA ― ― 1.0 V Transition frequency f T V CE = 10 V, IC = 20 mA 50 70 ― MHz Collector output capacitance C ob V CB = 20 V, IE = 0, f = 1 MHz ― 3.0 ― pF Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) C5027 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Collector current I C (mA) th t Collector current I C ( m A ) Collector-emitter saturation voltage VCE (sat) ( V ) Collector-emitter voltage V CE (V) Collector current I C (mA) Collector current I C (mA) DC current gain h FE Collector current I C (mA) Collector-emitter saturation voltage VCE (sat) ( V ) DC current gain h FE Collector current I C (mA) Base-emitter saturation voltage VBE (sat) ( V ) IC – VCE VCE (sat) – IC VBE (sat) – IC hFE – IC hFE – IC VCE (sat) – IC 0.6 4 3 120 100 4 8 12 Common emitter Ta = 2 5 ° C IB = 0.2 mA 20 24 0.4 Common emitter VCE = 10 V 500 0.3 300 1 3 10 100 Ta = 100°C −25 100 Common emitter Ta = 2 5 °C 500 0.3 300 1 3 10 100 VCE = 20 V 100 −25 Common emitter IC/IB = 5 1 0.3 3 10 30 0.05 0.1 0.3 0.5 100 Ta = 100°C Common emitter Ta = 2 5 ° C 1 0.3 3 10 30 0.05 0.1 0.3 0.5 100 IC/IB = 10 5 Common emitter IC/IB = 5 Ta = 2 5 ° C 0.3 0.5 0.3 0.1 1 3 10 100

Collector-base voltage V CB (V) Collector output capacitance Cob (pF) Collector current I C ( A ) Safe Operating Area Collector-emitter voltage V CE (V) fT – IC Cob – VCB 100 IE = 0 f = 1 MHz Ta = 2 5 ° C 3 10 30 300 100 0.2 0.4 0.6 0.8 Common emitter VCE = 10 V 1.0 Ta = 100°C 1.2 −25 10 Common emitter Ta = 2 5 °C 500 0.3 300 1 3 10 100 VCE = 20 V 100 Transition frequency f T (MHz) Base-emitter voltage V BE (V) IC – VBE Collector current I C (mA) *: Single nonrepetitive pulse Ta = 2 5 ° C Curves must be derated linearly with increase in temperature. 0.5 100 300 500 30 100 IC max (continuous) IC max (pulsed)* 1 ms* 10 ms* 100 ms* DC operation Ta = 25°C 10 300 VCEO max 500

rth – tw Pulse width t w (s) Transient thermal resistance r th (°C /W) 0 25 50 75 100 125 175 0.4 0.8 1.2 1.4 1.6 1.0 0.6 0.2 150 Curves should be applied in thermal limited area. (single nonrepetitive pulse) Ta = 25°C 1000 0.1 0.001 0.01 1 10 100 1000 0.1 500 100 300 0.3 0.5 Ambient temperature Ta (°C) PC – Ta Collector power dissipation P C (W)

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