2SC4957 NEC | Alldatasheet

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Technical content

The information in this document is subject to change without notice. SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

FEATURES

  • Low Noise, High Gain
  • Low Voltage Operation
  • Low Feedback Capacitance C re = 0.3 pF TYP.

ORDERING INFORMATION

PART QUANTITY PACKING STYLENUMBER 2SC4957-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 2SC4957-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4957) ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) Collector to Base Voltage V CBO 9V Collector to Emitter Voltage V CEO 6V Emitter to Base Voltage V EBO 2V Collector Current I C 30 mA Total Power Dissipation P T 180 mW Junction Temperature T j 150 ˚C Storage Temperature T stg –65 to +150 ˚C 1993 DATA SHEET PACKAGE DIMENSIONS in millimeters PIN CONNECTIONS Collector Emitter Base Emitter 2.8 –0.3 +0.2 1.5 –0.1 +0.2 0.4 –0.05 +0.1 0.4 –0.05 +0.1 2.9 ±0.2 (1.8) 0.85 0.95 0.6 –0.05 +0.1 0.4 –0.05 +0.1 1.1 –0.1 +0.2 0.8 0 to 0.1 0.16 –0.06 +0.1 (1.9) Caution; Electrostatic Sensitive Device. Document No. P10379EJ2V0DS00 (2nd edition) (Previous No. TD-2408) Date Published July 1995 P Printed in Japan

ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector Cutoff Current I CBO 0.1 µAV CB = 5 V, IE = 0 Emitter Cutoff Current I EBO 0.1 µAV EB = 1 V, IC = 0 DC Current Gain h FE 75 150 V CE = 3 V, IC = 10 mA*1 Gain Bandwidth Product f T 12 GHz V CE = 3 V, IC = 10 mA Feed-back Capacitance C re 0.3 0.5 pF V CB = 3 V, IE = 0, f = 1 MHz*2 Insertion Power Gain |S 21e|2 91 1 d B V CE = 3 V, IC = 10 mA, f = 2.0 GHz Noise Figure NF 1.5 2.5 dB V CE = 3 V, IC = 3 mA, f = 2.0 GH *1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank T83 Marking T83 hFE 75 to 150 TYPICAL CHARACTERISTICS (T A = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TA – Ambient Temperature – ˚C PT – Total Power Dissipation – mW COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VBE – Base to Emitter Voltage – V IC – Collector Current – mA VCE = 3 V Free Air 200 100 100 150 0.5 1.0 V CE = 3 V 180 mW

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE – Collector to Emitter Voltage – V IC – Collector Current – mA DC CURRENT GAIN vs. COLLECTOR CURRENT IC – Collector Current – mA hFE – DC Current Gain GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT IC – Collector Current – mA fT – Gain Bandwidth Product – GHz INSERTION POWER GAIN vs. COLLECTOR CURRENT IC – Collector Current – mA |S21e|2 – Insertion Power Gain – dB f = 2 GHz f = 2 GHz 500 A 400 A 300 A 200 A IB = 100 A 0.1 200 100 0.2 0.5 100 5 V VCE = 3 V 0.5 5 V 3 V VCE = 1 V 5 V 3 V VCE = 1 V µ µ µ µ µ NOISE FIGURE vs. COLLECTOR CURRENT IC – Collector Current – mA NF – Noise Figure – dB FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE VCB – Collector to Base Voltage – V C re – Feed-back Capacitance – pF 0.1 0.5 0.5 0.2 0.3 0.4 0.5 f = 2 GHz V CE = 3 V f = 1 MHz

(VCE = 3 V, IC = 1 mA, ZO = 50 Ω ) fS 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG CE = 3 V, IC = 3 mA, ZO = 50 Ω ) fS 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

(VCE = 3 V, IC = 5 mA, ZO = 50 Ω ) fS 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG CE = 3 V, IC = 10 mA, ZO = 50 Ω ) fS 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11