ST2SC458 SEMTECH_ELEC | Alldatasheet
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Dated : 07/12/2002 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST 2SC458 NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three group, B, C and D according to its DC current gain. On special request, thes e transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25℃) Symbol Value Unit Collector Base Voltage V CBO 30 V Collector Emitter Voltage V CEO 30 V Emitter Base Voltage V EBO 5 V Collector Current I C 100 mA Emitter Current I E -100 mA Power Dissipation P tot 200 mW Junction Temperature T j 150 OC Storage Temperature Range T S -55 to +150 OC
Dated : 07/12/2002 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST 2SC458 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain at VCE=12V, IC=2mA Current Gain Group B C D hFE hFE hFE 100 160 250 200 320 500 Collector Cutoff Current at VCB=18V ICBO 0.5 μA Emitter Cutoff Current at VEB=2V IEBO 0.5 μA Collector Emitter Saturation Voltage at IC=10mA, IB=1mA VCE(sat) - 0.2 V Transition Frequency at VCE=12V, IC=2mA fT 230 MHz Base Emitter Voltage at IC=2mA, VCE=12V VBE - 0.67 0.75 V Collector Output Capacitance at VCB=10V, f=1MHz COB 1.8 3.5 pF Collector Base Breakdown Voltage at IC=10μA VCBO 30 V Collector Emitter Breakdown Voltage at IC=1mA VCEO 30 V Emitter Base Breakdown Voltage at IC=10μA VEBO 5 V Noise Figure at VCE=6V, IC=0.1mA, f=1kHz, Rg=500Ω NF dB Small signal input impedance at VCE=5V, IC=0.1mA,f=270Hz hie hie hie hie 16.5 130 k Ω X10 μS