2SC458_00 HITACHI-METALS | Alldatasheet

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Technical content

2SC458, 2SC2308 Silicon NPN Epitaxial ADE-208-1043 (Z) 1st. Edition Mar. 2001 Application

  • Low frequency amplifier
  • Complementary pair with 2SA1029 and 2SA1030 Outline 1. Emitter 2. Collector 3. Base TO-92 (1)

2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 2SC2308 Unit Collector to base voltage V CBO 30 55 V Collector to emitter voltage V CEO 30 50 V Emitter to base voltage V EBO 55V Collector current I C 100 100 mA Emitter current I E –100 –100 mA Collector power dissipation P C 200 200 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C

2SC458, 2SC2308 Electrical Characteristics (Ta = 25°C) 2SC458 2SC2308 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — 55 — — V I C = 10 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 30 — — 50 — — V I C = 1 mA, RBE = ¥ Emitter to base breakdown voltage V(BR)EBO 5 ——5 —— V I E = 10 mA, IC = 0 Collector cutoff current ICBO — — 0.5 — — 0.5 mAV CB =18 V, IE = 0 Emitter cutoff current IEBO — — 0.5 — — 0.5 mAV EB = 2 V, IC = 0 DC current transfer ratio hFE *1 100 — 500 100 — 320 V CE = 12 V, IC = 2 mA Collector to emitter saturation voltage VCE(sat) — — 0.2 — — 0.2 V I C = 10 mA, IB = 1 mA Base to emitter voltage VBE — 0.67 0.75 — 0.67 0.75 V V CE = 12 V, IC = 2 mA Gain bandwidth product fT — 230 — — 230 — MHz V CE = 12 V, IC = 2 mA Collector output capacitance Cob — 1.8 3.5 — 1.8 3.5 pF V CB = 10 V, IE = 0, f = 1 MHz Noise figure NF — 4 10 — 4 10 dB V CE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 500 W Small signal input impedance hie — 16.5 — — 16.5 — k W VCE = 5V, IC = 0.1mA, f = 270 Hz Small signal voltage feedback ratio h Small signal current trancefer ratio hfe — 130 — — 130 — Small signal output admittance hoe — 11.0 — — 11.0 — mS Note: 1. The 2SC458 and 2SC2308 are grouped by hFE as follows. BCD 2SC458 100 to 200 160 to 320 250 to 500 2SC2308 100 to 200 160 to 320 — See characteristic curves of 2SC458 (LG) and 2SC2310 except for the followings.

2SC458, 2SC2308 0 50 100 150 Ambient Temperature Ta (°C) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 200 100 Noise Figure vs. Frequency Noise Figure NF (dB) 100 1k 3k300 10k 30k30 Frequency f (Hz) IC = 0.1 mA R g = 500 Ω VCE = 6 V Collector to Emitter Voltage VCE (V) Noise Figure NF (dB) Noise Figure vs. Collector to Emitter Voltage 30201052 IC = 0.1 mA R g = 500 Ω f = 1kHz

2SC458, 2SC2308 Package Dimensions

0.60 Max

0.55Max 5.0 – 0.2 0.7

2.3 Max

12.7 Min 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g As of January, 2001 Unit: mm

2SC458, 2SC2308 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Hitachi Asia Ltd. Hitachi Tower

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