2SC4557 SANKEN | Alldatasheet
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Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg 2SC4557 900 550 10( Pulse20) 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB 2SC4557 100max 100max 550min 10to28 0.5max 1.2max 6typ 105typ Unit mA mA V V V MHz pF Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz 2SC4557 (Ta=25°C) (Ta=25°C) IC –V CE Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) ton •tstg•tf–IC Characteristics (Typical) θj-a–t Characteristics IC –V BE Temperature Characteristics (Typical)V CE (sat),VBE (sat)–IC Temperature Characteristics (Typical) Pc –Ta DeratingReverse Bias Safe Operating AreaSafe Operating Area (Single Pulse) 213 4 Collector-Emitter Voltage VCE (V) Collector Current IC (A) 600mA 800mA 400mA 200mA 1.2A IB =100mA 0.10.050.02 15 1 00.5 Collector-Emitter Saturation Voltage VCE(sat) (V) Base-Emitter Saturation Voltage V BE(sat) (V) (IC /IB =5) Collector Current IC (A) V BE (sat) 125˚C (Case Temp) 25˚C (Case Temp) –55˚C (Case Temp) 25˚C –55˚CV CE (sat) 125˚C (C ase Tem p) 0.2 1 0.5 10 5 0.1 0.5 Switching Time ton•tstg•tf(µ s) Collector Current IC (A) tstg ton tf V CC 250V IC :IB1 :–IB2 =10:1.5:3 0.1 0.5 1 10 100 1000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) 3.5 00 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink 100 50010 50 1000 0.5 0.1 Collector-Emitter Voltage VCE (V) Collector Current IC (A) Without Heatsink Natural Cooling L=3mH I B2=–1.0A Duty:less than 1% 10 50 100 500 1000 0.1 0.5 Collector-Emitter Voltage VCE (V) Collector Current IC (A) 100 µs Without Heatsink Natural Cooling Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =4V) 125˚C (Case Temp) –55˚C (Case Temp) 0.02 0.10.05 1 10 50.5 Collector Current IC (A) DC Current Gain h FE (VCE =4V) 125˚C 25˚C –55˚C 25˚C (Case Temp) n Typical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω ) IC (A) VBB2 (V) IB2 (A) –1.5 ton (ms) 1max tstg (ms) 5max tf (ms) 0.5max IB1 (A) 0.75 VBB1 (V) External DimensionsFM100(TO3PF) 4.41.5 1.5 BE C 5.45±0.1 ø3.3±0.2 1.6 3.3 1.75 0.8±0.2 2.15 1.05+0.2 -0.1 5.45±0.1 23.0±0.316.2 9.5±0.2 5.5 15.6±0.2 5.5±0.2 3.45 3.350.65+0.2 -0.1 ±0.2 3.0 0.8 a b Weight : Approx 2.0g a. Type No. b. Lot No.