C450DA700-0217 MARKTECH | Alldatasheet

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Technical content

Subject to change without notice. www.cree.com

FEATURES

  • Direct Attach LED Technology
  • Rectangular LED RF Performance – 450 & 460 nm – 430 mW min
  • High Reliability - Eutectic Attach
  • Low Forward Voltage (Vf) – 3.3 V Typical at 350 mA
  • Maximum DC Forward Current – 750 mA
  • InGaN Junction-Down Design for Improved Thermal Management
  • No Wire Bonds Required

APPLICATIONS

  • General Illumination − Aircraft − Decorative Lighting − Task Lighting − Outdoor Illumination
  • White LEDs
  • Camera Flash
  • Projection Displays
  • Automotive
  • Large LCD Backlighting – Television Direct Attach DA700™ LEDs CxxxDA700-Sxx000 Data Sheet Cree’s Direct Attach DA700 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The DA700 LEDs are among the brightest in the lighting market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad-down design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance from improved thermal management. CxxxDA700-Sxx000 Chip Diagram D ata Sheet: CPR3EU Rev. - Top View Bottom ViewDie Cross Section Anode (+) 645 x 75 μm DA700 LED 700 x 700 μm t = 335 μm Cathode (-) 645 x 495 μm Gap 75 μm

Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc. 2 CPR3EU Rev. - Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at TA = 25°C Notes 1, 2 & 3 CxxxDA700-Sxx000 DC Forward Current 750 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1000 mA LED Junction Temperature 150°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Note 2 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) C450DA700-Sxx000 2.9 3.3 3.5 2 20 C460DA700-Sxx000 2.9 3.3 3.5 2 21 Mechanical Specifications CxxxDA700-Sxx000 Description Dimension Tolerance P-N Junction Area (μm) 645 x 645 ±35 Chip Bottom Area (μm) 700 x 700 ±35 Chip Top Area (μm) 340 x 340 ±35 Chip Thickness (μm) 335 ±25 AuSn Bond Pad Width – Anode (um) 75 ±15 AuSn Bond Pad Length – Anode (um) 645 ±35 AuSn Bond Pad Width – Cathode (um) 495 ±35 AuSn Bond Pad Length – Cathode (um) 645 ±35 Bond Pad Gap (μm) 75 ±15 AuSn Bond Pad Thickness (μm) 3 ±0.5 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1¾ packages (with Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere using Illuminance E. 3. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 100 200 300 400 500 600 700 800 25 50 75 100 125 150 175 Maximum Forward Current (mA) Ambient Temperature (C) Rth j-a = 10 C/W Rth j-a = 15 C/W Rth j-a = 20 C/W Rth j-a = 25 C/W

Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc. 3 CPR3EU Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxDA700-Sxx000 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA700-Sxxxxx) orders may be filled with any or all bins (CxxxDA700-xxxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp. C450DA700-S43000 C450DA700-0217 C450DA700-0218 C450DA700-0219 C450DA700-0220 C450DA700-0213 C450DA700-0214 C450DA700-0215 C450DA700-0216 C450DA700-0209 C450DA700-0210 C450DA700-0211 C450DA700-0212 C450DA700-0205 C450DA700-0206 C450DA700-0207 C450DA700-0208 Dominant Wavelength (nm) 447.5 450 452.5445 455 515 485 455 430 Radiant Flux (mW) C460DA700-S43000 C460DA700-0217 C460DA700-0218 C460DA700-0219 C460DA700-0220 C460DA700-0213 C460DA700-0214 C460DA700-0215 C460DA700-0216 C460DA700-0209 C460DA700-0210 C460DA700-0211 C460DA700-0212 C460DA700-0205 C460DA700-0206 C460DA700-0207 C460DA700-0208 Dominant Wavelength (nm) 457.5 460 462.5455 465 515 485 455 430 Radiant Flux (mW)

Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc. 4 CPR3EU Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. 25% 50% 75% 100% 125% 150% 175% 200% 0 100 200 300 400 500 600 700 Relative Intensity If (mA) Relative Intensity vs. Forward Current 0 100 200 300 400 500 600 700 DW Shift (nm) If (mA) Wavelength Shift vs. Forward Current 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 Relative Intensity Junction Temperature (°C) Relative Light Intensity Vs Junction Temperature 25 50 75 100 125 150 DW Shift (nm) Junction Temperature (°C) Dominant Wavelength Shift Vs Junction Temperature 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 Relative Intensity Junction Temperature (°C) Relative Light Intensity Vs Junction Temperature 25 50 75 100 125 150 DW Shift (nm) Junction Temperature (°C) Dominant Wavelength Shift Vs Junction Temperature -0.400 -0.350 -0.300 -0.250 -0.200 -0.150 -0.100 -0.050 0.000 25 50 75 100 125 150 Voltage Shift (V) Junction Temperature (°C) Voltage Shift Vs Junction Temperature 0 100 200 300 400 500 600 700 DW Shift (nm) If (mA) Wavelength Shift vs. Forward Current 100 200 300 400 500 600 700 0 1 2 3 4 5 If (mA) Vf (V) Forward Current vs. Forward Voltage 0 100 200 300 400 500 600 700 DW Shift (nm) If (mA) Wavelength Shift vs. Forward Current 100 200 300 400 500 600 700 0 1 2 3 4 5 If (mA) Vf (V) Forward Current vs. Forward Voltage

Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc. 5 CPR3EU Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip. DA700 blue