C4321

2SC4321 TOSHIBA | Alldatasheet

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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2atos © — Low Noise Figure, High Gain wzszon, | : So| @ = NF=1.1dB, |Sg1¢?=13dB (f=1GHz) J qe *o ag |_| MAXIMUM RATINGS (Ta = 25°C) a} a J [e CHARACTERISTIC SYMBOL UNIT =: Collector-Base Voltage VCBO - Collector-Emitter Voltage VCEO 3 3s Emitter-Base Voltage VEBO 3| 3 3 Gollesior Current ‘ Collector Power Dissipation 4 Storage Temperature Range —55~125 2. EMITTER = 3. COLLECTOR Marking JEDEC = 3,__Type Name EIAJ SC-70 [Me TOSHIBA —_2-2E1A Weight : 0.006g 1 2 MICROWAVE CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | SYMBOL TEST CONDITION Transition Frequency VcE=8V, Io=20mA | 7] 10| — | GH: | Insertion Gai Sa1el’ @) | Vom=8V, I¢=20mA, f=1GHz | 10[ 13] — | ‘aserion Gain Sorel?) [Von=8V, I¢=20mA, f=2GHz [— | 7 — | — NF()_[Von=8V, Io=5mA, f=1GHz | — | 11] 35] ose Migure NF(2)_[Vcp=8V, Ic=5mA, f=2GHz L— [.17[ — | ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL | TEST CONDITION Collector Cut-off Current Icpo | Vcop=10V, In=0 | — | — | 1] ga | Emitter Cut-off Current IEBO VEB=1V, Ic=0 | — | — | 1] 2a] DC Current Gain ipe —|Vor=8V. 1o=20ma | so] — | 250] — Output Capacitance Vcp=10V, In=0, f=1MHz | — | 065] — | oF | Reverse Transfer Capacitance (Note)| — | 045| 05] pF | (Note) Cre is measured by 3 terminal method with Capacitance Bridge. 96 1001EAA @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can halfuncion gr al-cue fo thet inherent electrical enstvy ond winerabity Yo phil sess fs the responsibly of the buyer, when valing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss OF humane, bodily injury or damage to proverty, In. developing your designs, please ensure. that TOSHIBA, products are. used within. specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only asa. guide, for the applications of our products. No responsibility is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-10-28 1/5

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