C3M0065100K ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 7
Technical content
www.iscsemi.com 1
FEATURES
- HighBlockingVoltagewith LowOn-Resistance
- RDS(ON)=78mΩ（TYP.）@VGS=15VTj=25℃
- HighSpeedSwitching with LowCapacitance
- EasytoParallelandSimple toDrive
APPLICATIONS
- SolarInverters
- SwitchMode PowerSupplies
- DC-DCConverters
- Motordrives AbsoluteMaximumRatings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 1000 V VGSS Gate-SourceOpetationVoltage -8/+19 V ID DrainCurrent-Continuous 35 A DrainCurrent-Continuous@Tc=100℃ 22.5 A IDM DrainCurrent-SinglePluse 90 A PD TotalDissipation@TC=25℃ 113.5 W TJ Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
www.iscsemi.com 2 THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.1 ℃/W ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.1mA 1000 -- -- V VGS(th) GateThresholdVoltage VDS =10V;ID =5mA 1.8 2.1 3.5 V VGS(th) GateThresholdVoltage VDS =10V;ID =5mA;TJ=150℃ -- 1.6 -- V RDS(ON) Drain-SourceOn-stageResistance VGS=15V;ID=20A -- 65 78 mΩ RDS(ON) Drain-SourceOn-stageResistance VGS=15V;ID=20A;TJ=150℃ -- 90 -- mΩ IGSS GateSourceLeakageCurrent VGS=15V;VDS=0V -- 10 250 nA IDSS ZeroGateVoltageDrainCurrent VDS =1000V;VGS =0V -- 1 100 μA RG InternalGateResistance f=1MHz,VAC =25mV -- 4.7 -- Ω gfS Transconductance VDS =20V;ID=20A -- 14.3 -- S gfS Transconductance VDS =20V;ID=20A;TJ=150℃ -- 11.9 -- S Ciss InputCapacitance VGS =0V, VDS =1000V, f=1.0MHz VAC=25mV -- 1355 -- pFCoss OutputCapacitance -- 70 -- Crss ReverseTransferCapacitance -- 10.5 -- Qg TotalGateCharge VDD=800V, ID=36A, VGS=-4to+15V -- 89 -- nCQgs Gate-SourceCharge -- 3.8 -- Qgd Gate-DrainCharge -- 38 --
www.iscsemi.com 3 td(on) Turn-onDelayTime VGS=-4to+15V ID=36A, VDS=800V, Rg=25Ω, inductiveload -- 38 -- ns tr Turn-onRiseTime -- 86 -- td(off) Turn-offDelayTime -- 80 -- tf Turn-offFallTime -- 100 -- SOURCE-DRAINBODYDIODE CHARACTERISTICS Drain-SourceBodyDiodeCharacteristics VSD DiodeForwardVoltage ISD=10A;VGS=-4V -- 4.8 -- V VSD DiodeForwardVoltage ISD=10A;VGS=-4V;TJ=150℃ -- 4.4 -- V IS DiodepulseCurrent VGS=-4V -- -- 90 A trr ReverseRecoveryTime VGS =-4V,ISD =20A, VR =700V dif/dt=4500A/µs TJ=150℃ -- 14 -- ns Qrr ReverseRecoveryCharge -- 310 -- uC Irrm PeakReverseRecoveryCurrent -- 34 -- A
www.iscsemi.com 4 TYPICALCHARACTERISTICS
www.iscsemi.com 5
www.iscsemi.com 6
www.iscsemi.com 7 PackageDimensions(UNIT:MM): TO-247-4 PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISCmakes nowarranty orguarantee regardingthe suitabilityof its products foranyparticularpurpose, nordoes ISCassumeanyliability arisingfrom theapplication oruse ofanyproducts, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages.