C3M0065100J ISC | Alldatasheet
Document overview
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Technical content
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FEATURES
- HighBlockingVoltagewith LowOn-Resistance
- RDS(ON)=78mΩ）@VGS=15VTc=25℃
- HighSpeedSwitching with LowCapacitance
- EasytoParallelandSimple toDrive
APPLICATIONS
- Renewableenergy
- EVbatterychargers
- HighvoltageDC/DC converters
- SwitchMode PowerSupplies AbsoluteMaximumRatings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 1000 V VGSS Gate-SourceOpetationVoltage -8/+19 V ID DrainCurrent-Continuous 35 A DrainCurrent-Continuous@Tc=100℃ 22.5 A IDM DrainCurrent-SinglePluse 90 A PD TotalDissipation@TC=25℃ 114 W TJ Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
www.iscsemi.com 2 THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.1 ℃/W ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.1mA 1000 -- -- V VGS(th) GateThresholdVoltage VDS =10V,ID =5mA 1.8 2.1 3.5 V RDS(ON) Drain-SourceOn-stageResistance VGS=15V;ID=20A -- 65 78 mΩ RDS(ON) Drain-SourceOn-stageResistance VGS=15V;ID=20A IGSS GateSourceLeakageCurrent VGS=15V;VDS=0V -- 10 250 μA IDSS ZeroGateVoltageDrainCurrent VDS =1000V;VGS =0V -- 1 100 μA gfts Transconductance VDS =20V;ID=20A -- 14.3 -- S gfts Transconductance VDS =20V;ID=20A TJ=150℃ -- 11.9 -- RG Gate−Resistance f=1.0MHz -- 4.7 -- Ω Ciss InputCapacitance VGS =0V, VDS =600V, f=1.0MHz -- 660 -- pFCoss OutputCapacitance -- 60 -- Crss ReverseTransferCapacitance -- 4.0 -- Qg TotalGateCharge VDD=700V, ID=20A, VGS=-4to+15V -- 9 -- nCQgs Gate-SourceCharge -- 16 -- Qgd Gate-DrainCharge -- 35 -- td(on) Turn-onDelayTime VGS=-4to+15V ID=20A, VDS=700V, Rg=2.5Ω, -- 13 -- ns tr Turn-onRiseTime -- 9 -- td(off) Turn-offDelayTime -- 13 -- tf Turn-offFallTime -- 7.5 -- EON Turn-On Switching Energy VGS=-4to+15V ID=20A, VDS=700V, Rg=2.5Ω,L=130uH -- 157 -- uJ EOFF Turn-Off Switching Energy -- 35 --
www.iscsemi.com 3 SOURCE-DRAINBODYDIODE CHARACTERISTICS Drain-SourceBodyDiodeCharacteristics VSD DiodeForwardVoltage ISD=10A;VGS=-4V -- 4.8 -- V VSD DiodeForwardVoltage ISD=10A;VGS=-4V trr ReverseRecoveryTime VGS =-4V,ISD =20A, VR =700V, dif/dt=4500A/µs, TJ=150℃ -- 14 -- ns Qrr ReverseRecoveryCharge -- 310 -- uC Irrm PeakReverseRecoveryCurrent -- 34 -- A PackageDimensions(UNIT:MM):
www.iscsemi.com 4 PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISCmakes nowarranty orguarantee regardingthe suitabilityof its products foranyparticularpurpose, nordoes ISCassumeanyliability arisingfrom theapplication oruse ofanyproducts, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages.