2SC3964_04 TOSHIBA | Alldatasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3964 Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier Output Stage

  • High DC current gain: h FE = 500 (min) (IC = 400 mA)
  • Low collector-emitter saturation voltage: V CE (sat) = 0.5 V (max) (I C = 300 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 40 V Collector-emitter voltage V CEO 40 V Emitter-base voltage V EBO 7 V Collector current I C 2 A Base current I B 0.5 A Collector power dissipation P C 1.5 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 40 V, IE = 0 ― ― 10 µA Emitter cut-off current I EBO V EB = 7 V, IC = 0 ― ― 1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 40 ― ― V DC current gain h FE V CE = 1 V, IC = 400 mA 500 ― ― Collector-emitter saturation voltage V CE (sat) IC = 300 mA, IB = 1 mA ― 0.3 0.5 V Base-emitter saturation voltage V BE (sat) I C = 300 mA, IB = 1 mA ― ― 1.1 V Transition frequency f T V CE = 2 V, IC = 100 mA ― 220 ― MHz Collector output capacitance C ob V CB = 10 V, IB = 0, f = 1 MHz ― 20 ― pF Turn-on time t on ― 1.0 ― Storage time t stg ― 3.0 ― Switching time Fall time t f IB1 = −IB2 = 1 mA, duty cycle ≤ 1% ― 1.2 ― µs Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.) IB1 20 µs VCC = 30 V Output 100 Ω IB2 IB1InputIB2

C3964 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

VCE – IC Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Collector current I C (A) VCE – IC Collector-emitter voltage V CE (V) Collector current I C (A) VCE – IC Collector-emitter voltage V CE (V) Collector current I C (A) Collector-emitter voltage V CE (V) Collector current I C (A) hFE – IC DC current gain h FE Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) ( V ) 2.4 1.6 1.2 0.8 0.4 1 2 3 4 5 6 Common emitter Ta = 2 5 ° C 20 IB = 0.2 mA 2.0 0.5 1.2 0.8 0.6 0.4 0.2 Common emitter Ta = 2 5 ° C IB = 1 mA 2.8 1.0 105 30 20 0.8 0.6 0.4 0.2 IB = 1 mA 2.8 1.0 105 Common emitter Ta = −55°C 0.8 0.6 0.4 0.2 Common emitter T a = 100°C IB = 1 mA 2.8 1.0 10 20 30 5 0.03 0.01 Ta = 100°C 25 0.03 0.1 0.3 1 0.3 0.5 Common emitter IC/IB = 300 −55 0.05 0.1 0.01 Ta = 100°C 0.03 0.1 0.3 1 300 500 1000 5000 Common emitter VCE = 1 V −55 3000 100

Base-emitter voltage V BE (V) IC – VBE Collector current I C ( A ) Collector current I C (A) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) ( V ) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C ( A ) 2.0 0.4 0.8 1.2 1.6 Common emitter VCE = 1 V 25Ta = 100°C −55 Ambient temperature Ta (°C) PC – Ta Collector power dissipation P C ( m W ) 0.1 0.01 0.03 0.1 0.3 1 0.3 0.5 Ta = −55°C Common emitter IC/IB = 300 100 0.05 0.5 2 0.01 0.03 0.05 0.1 0.3 0.5 0.5 1 3 10 30 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* 1 ms* 10 ms* 100 ms* DC operation Ta = 25°C 1 s* 0.3 0.1 VCEO max 5 50 500 1000 1500 40 80 120 200 2000 160 Ta = 25 °C

  • The information contained herein is subject to change without notice.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
  • TOSHIBA is continually working to improve the quality an d reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utiliz ing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliab ility or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619EAARESTRICTIONS ON PRODUCT USE