2SC3831 SANKEN | Alldatasheet
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Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)Application : Switching Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg 2SC3831 600 500 10( Pulse20) 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB 2SC3831 1max 100max 500min 10to30 0.5max 1.3 max 8typ 105typ Unit mA mA V V V MHz pF Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz 2SC3831 (Ta=25°C) (Ta=25°C) IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) ton •tstg•tf–IC Characteristics (Typical) θj-a–t Characteristics IC –V BE Temperature Characteristics (Typical)V CE (sat),VBE (sat)–IC Temperature Characteristics (Typical) Pc –Ta DeratingReverse Bias Safe Operating AreaSafe Operating Area (Single Pulse) 213 4 Collector-Emitter Voltage VCE (V) Collector Current IC (A) 800mA1A 600mA 400mA 200mA IB=1.2A 100mA 0.02 0.10.05 15 1 00.5 (IC /IB =5) Collector Current IC (A) V BE (sat) 125˚C (Case Temp) 25˚C (Case Temp) –55˚C (Case Temp) 25˚C –55˚CV CE (sat) 125˚C (CaseTemp) 0.2 1 0.5 10 5 0.1 0.5 Switching Time ton•tstg•tf(µ s) Collector Current IC (A) tstg ton tf V CC 200V IC :IB1 :IB2 =10:1:–2 0.1 0.5 1 10 100 1000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) 100 3.5 00 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink 100 500 60050 0.5 0.05 0.01 Collector-Emitter Voltage VCE (V) Collector Current IC (A) 10 508 100 500 600 0.05 0.02 0.5 0.1 Collector-Emitter Voltage VCE (V) Collector Current IC (A) Without Heatsink Natural Cooling DC 100 µs 10ms 1ms Collector-Emitter Saturation Voltage VCE(sat) (V) Base-Emitter Saturation Voltage V BE(sat) (V) Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =4V) 125˚C (Case Temp) –55˚C (Case Temp) 0.02 0.10.05 1 10 50.5 Collector Current IC (A) DC Current Gain h FE (VCE =4V) 125˚C 25˚C –55˚C 25˚C (Case Temp) Without Heatsink Natural Cooling L=3mH I B2 =–0.5A Duty:less than 1% n Typical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω ) IC (A) VBB2 (V) IB2 (A) –1.0 ton (ms) 1max tstg (ms) 4.5max tf (ms) 0.5max IB1 (A) 0.5 VBB1 (V) External DimensionsMT-100(TO3P) 15.6±0.4 9.6 19.9±0.3 4.0 2.0 5.0±0.2 1.8 ø3.2±0.1 1.05+0.2 -0.1 20.0min 4.0max BE 5.45±0.1 5.45±0.1 C 4.8±0.2 0.65+0.2 -0.1 1.4 2.0±0.1 a b Weight : Approx 6.0g a. Type No. b. Lot No.