C35 DIGITRON | Alldatasheet
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144 Market Street
phone +1.908.245-7200 C35 SERIES SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive forward and reverse blocking voltage(1) (TC = -65 to +125°C) C35U C35F C35A C35G C35B C35H C35C C35D C35E C35M C35S C35N V DRM or VRRM 100 150 200 250 300 400 500 600 700 800 Volts Non-repetitive peak reverse voltage (TC = -65 to +125°C, V < 5.0ms) C35U C35F C35A C35G C35B C35H C35C C35D C35E C35M C35S C35N V RSM 150 225 300 350 400 500 600 720 840 960 Volts Forward current RMS (all conduction angles) IT(RMS) 35 Amps Peak non-repetitive surge current (1cycle, 60 Hz) ITSM 225 Amps Circuit fusing considerations (t = 8.3ms) I2t 75 A2s Forward peak gate power PGM 5 Watts Forward average gate power PG(AV) 0.5 Watts Peak reverse gate voltage VGRM 5 Volts Operating junction temperature range TJ -65 to +125 °C Storage temperature range Tstg -65 to +150 °C Note 1: VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 1.7 °C/W sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130129
phone +1.908.245-7200 C35 SERIES SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ. Max Unit Peak reverse or forward blocking current (VD = Rated VDRM, TC = 125°C) (VR = Rated VRRM, TC = 125°C) C35U,F, A, G C35B C35H C35C C35D C35E C35M C35S C35N I DRM or IRRM 4.5 mA Average forward or reverse blocking current D = Rated VDRM, TC = 125°C) (VR = Rated VRRM, TC = 125°C) C35U,F, A, G C35B C35H C35C C35D C35E C35M C35S C35N I DRM(AV) or IRRM(AV) 6.5 5.5 2.5 2.25 mA Peak on-state voltage TM = 50.3A peak, pulse width ≤ 1ms, duty cycle ≤ 2.0%) VTM
2 Volts
Gate trigger current (continuous dc) (VD = 12V, RL = 50Ω) (VD = 12V, RL = 50Ω, TC = -65°C) IGT mA Gate trigger voltage (continuous dc) (VD = 12V, RL = 50Ω, TC = -65°C to +125°C) (VD = Rated VDRM, RL = 1000Ω, TC = 125°C) VGT 0.25 Volts Holding current D = 24V, gate supply = 10V, 20Ω, 45µs minimum pulse width, IT = 0.5A) IH 100 mA Critical rate of rise of forward blocking voltage D = Rated VDRM, TC = 125°C) C35U, F, M, S, N C35A, G, B, H C35C, D, E dv/dt V/µs sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130129
phone +1.908.245-7200 C35 SERIES SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case TO-48 Marking Alpha-numeric Polarity Cathode is stud TO-48 Inches Millimeters Min Max Min Max A 0.604 0.614 15.340 15.600 B 0.551 0.559 14.000 14.200 C 1.050 1.190 2.670 30.230 F 0.135 0.160 3.430 4.060 H - 0.265 - 6.730 J 0.420 0.455 10.670 11.560 K 0.620 0.670 15.750 17.020 L 0.300 0.350 7.620 8.890 Q 0.055 0.085 1.400 2.160 T 0.501 0.505 12.730 12.830 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130129