UPC358 NEC | Alldatasheet
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© 1997 DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC358 Document No. G11765EJ4V0DS00 (4th edition) (Previous No. IC-1284) Date Published May 1997 N Printed in Japan LOW POWER DUAL OPERATIONAL AMPLIFIERS
DESCRIPTION
The µPC358 is a dual operational amplifier which is designed to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the power supply current drain is very low. Further advantage, the input common- mode voltage range includes ground in the linear mode.
FEATURES
- Internally frequency compensation
- Wide output voltage swing V– to V+ –1.5 V
- Common mode input voltage range includes V–
- Wide supply voltage range
3 V to 30 V (Single)
±1.5 V to ±15 V (Split)
- Output short circuit protection EQUIVALENT CIRCUIT (1/2 Circuit) OUT Q 6 Q 5 Q 7 Q 13 Q 12 Q 11 Q 10 Q 9Q 8 Q 4 Q 3Q 2 Q 1 C C II IN R SC
6 Aµ 6 Aµ
100 Aµ 50 Aµ PIN CONFIGURATION (Marking Side) OUT 1 II1 IN1 OUT 2 II2 IN2 +–1 –+ 2 +–1 +–2 1234 5 6 789 V OUT 1 II1 IN1 IN2 II2 OUT 2 V PC358C, 358G2µ PC358HAµ
ORDERING INFORMATION
µPC358C 8-pin plastic DIP (300 mil) µPC358G2 8-pin plastic SOP (225 mil) µPC358HA 9-pin slim SIP The mark shows major revised points. The information in this document is subject to change without notice.
µPC358 ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Parameter Symbol Ratings Unit Voltage between V+ and V– Note 1 V+ – V– –0.3 to +32 V Differential Input Voltage V ID ±32 V Input Voltage Note 2 VI V––0.3 to V–+32 V Output Voltage Note 3 VO V––0.3 to V++0.3 V Power Dissipation C Package Note 4 PT 350 mW Output Short Circuit Duration Note 6 Indefinite s Operating Ambient Temperature T A –20 to +80 °C Storage Temperature T stg –55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction independent of the magnitude of V+. Either input signal should not be allowed to go negative by more than 0.3 V. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mW/°C when operating ambient temperature is higher than 55 °C. 5. Thermal derating factor is –4.4 mW/°C when operating ambient temperature is higher than 25 °C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage (Split) V ± ±1.5 ±15 V Supply Voltage (V– = GND) V + +3 +30 V ELECTRICAL CHARACTERISTICS (T A = 25 °C, V+ = +5 V, V– = GND) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Offset Voltage V IO R S = 0 Ω± 2 ±7m V Input Offset Current I IO ±5 ±50 nA Input Bias Current Note 7 IB 45 250 nA Large Signal Voltage Gain A V R L ≥ 2 kΩ 25 100 V/mA Supply Current I CC R L = ∞ , IO = 0 A, Both Amplifiers 0.7 1.2 mA Common Mode Rejection Ratio CMR 65 70 dB Supply Voltage Rejection Ratio SVR 65 100 dB Output Voltage Swing V O R L = 2 kΩ (Connect to GND) 0 V + –1.5 V Common Mode Input Voltage Range V ICM 0V + –1.5 V Output Current (SOURCE) I O SOURCE VIN+ = +1 V, VIN– = 0 V 20 40 mA Output Current (SINK) I O SINK VIN– = +1 V, VIN+ = 0 V 10 20 mA VIN– = +1 V, VIN+ = 0 V, 12 50 µA VO = 200 mV Channel Separation f = 1 kHz to 20 kHz 120 dB Note 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
µPC358 TYPICAL PERFORMANCE CHARACTERISTICS (T A = 25 °C, TYP.) POWER DISSIPATION PT - Total Power Dissipation - mW TA - Operating Ambient Temperature - °C SUPPLY CURRENT ICC - Supply Current - mA V + - Supply Voltage - V (V– = GND) INPUT OFFSET VOLTAGE VIO - Input Offset Voltage - mV V + - Supply Voltage - V (V– = GND) INPUT OFFSET VOLTAGE VIO - Input Offset Voltage - mV –50 T A - Operating Ambient Temperature - ˚C INPUT BIAS CURRENT IB - Input Bias Current - nA V+ - Supply Voltage - V (V– = GND) INPUT BIAS CURRENT IB - Input Bias Current - nA TA - Operating Ambient Temperature - ˚C 0 1 02 03 04 0 ICC TA = 0 to 70 °C TA = –20 °C A TA = 25 ˚C 10 20 30 40 0 50 100 V + = 5 V 600 500 400 300 200 100 20 40 60 80 100 PC358G2 PC358C, 358HA µ µ 100 04 0 302010 TA = 25 °C 100 –50 100 500 V+ = +15 V V– = GND
µPC358 OUTPUT SHORT CIRCUIT CURRENT IO SHORT - Output Short Circuit Current - mA –20 T A - Ambient Temperature - ˚C OPEN LOOP FREQUENCY RESPONSE Aυ - Open Loop Voltage Gain - dB 140 120 100 f - Frequency - Hz OPEN LOOP VOLTAGE GAIN AV - Open Loop Voltage Gain - dB 160 120 V - Supply Voltage - V (V – = GND) LARGE SIGNAL FREQUENCY RESPONSE VO - Output Voltage Swing -Vp-p f - Frequency - Hz 0 20 60 80 10 100 k 10 M 10 20 30 40 IO SHORT V+ = 30 V 10 MΩ VIN V+/2 VO– 0.1 Fµ V+ = 10 to 15 V R L = 20 kΩ R L = 2 kΩ 40 10 k 100 1 k 1 M 1 k +15 V VO VIN 100 kΩ 3 5 10 k 30 50 100 k 300 500 1 M 1 kΩ +7 V 2 kΩ VOLTAGE FOLLOWER PULSE RESPONSE Input Voltage - V Output Voltage - V VIN -V O - 0 2 04 06 08 0 COMMON MODE REJECTION RATIO CMR - Common Mode Rejection Ratio - dB100 120 100 f - Frequenc y - Hz 1 k 10 k 100 k 1 M R L ≥ 2 kΩ V = 15 V t - Time - sµ
µPC358 SLEW RATE –50 0.3 0.2 0.1 T A - Operating Ambient Temperature - ˚C 0 50 100 SR - Slew Rate - V/ s µ SR – SR + V± = ±15 V VO = ±10 V 100 VO - Output Voltage - V 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 OUTPUT SINK CURRENT LIMIT VO IO SINK V+/2 IO SINK - Output Sink Current - mA V+ = +15 V ΔVO - Output Voltage to V+ - V V+/2 ΔVO IO SOURCE V+ = +15 V OUTPUT SOURCE CURRENT LIMIT 0.01 IO SOURSE - Output Source Current - mA
µPC358 PACKAGE DRAWINGS
8 PIN PLASTIC DIP (300 mil)
ITEM MILLIMETERS INCHESNOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. P8C-100-300B,C-1 N 0.25 0.01 P 0.9 MIN. 0.035 MIN. R 0~15 ° 0~15 ° A 10.16 MAX. 0.400 MAX. B 1.27 MAX. 0.050 MAX. F 1.4 MIN. 0.055 MIN. J 5.08 MAX. 0.200 MAX. D 0.50±0.10 0.020 +0.004 –0.005 H 0.51 MIN. 0.020 MIN. I 4.31 MAX. 0.170 MAX. L 6.4 0.252 M 0.25 0.010 +0.004 –0.003 +0.10 –0.05 2) ltem "K" to center of leads when formed parallel. M A RM PI J H G F DN C B L K
µPC358
8 PIN PLASTIC SOP (225 mil)
A M C D F NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. 1 4 M E G B P H I J K L N detail of lead end ITEM MILLIMETERS INCHES A B C E F G H I J 5.37 MAX. 1.27 (T.P.) 1.8 MAX. 1.49 6.5±0.3 0.78 MAX. 0.12 1.1 4.4 M 0.1±0.1 N 0.212 MAX. 0.031 MAX. 0.004±0.004 0.071 MAX. 0.059 0.256±0.012 0.173 0.043 0.005 0.050 (T.P.) S8GM-50-225B-4 P3 ° 3°+7° D 0.40 0.016+0.10 –0.05 K 0.15 0.006+0.10 –0.05 L 0.6±0.2 0.024 0.10 –3° +7° –3° 0.004 +0.008 –0.009 +0.004 –0.002 +0.004 –0.003
µPC358
9 PIN PLASTIC SLIM SIP
Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. P9HA-254B-1 ITEM MILLIMETERS INCHES A C F G H J K M N Q 22.86 MAX. 0.5±0.1 1.27 MAX. 0.51 MIN. 5.08 MAX. 1.1 MIN. U V 3.2±0.5 0.25 5.75 MAX. 2.8±0.2 1.5 MAX. Y 0.25 2.54 0.900 MAX. 0.043 MIN. 0.010 0.100 0.050 MAX. 0.020 MIN. 0.200 MAX. 0.11 0.227 MAX. 0.059 MAX. 0.01 0.126±0.02 +0.004 –0.003 0.02 +0.10 –0.05 +0.004 –0.005 +0.009 –0.008 1.1 MIN.Z 0.043 MIN. K F G M C Z H J V U 19 Q N Y M A
µPC358 RECOMMENDED SOLDERING CONDITIONS When soldering these products, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL ” (C10535E). Type of Surface Mount Device µPC358G2: 8-pin plastic SOP (225 mil) Process Conditions Symbol Infrared ray reflow Peak temperature: 230 °C or below (Package surface temperature), IR30-00-1 Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 1 time. Vapor phase soldering Peak temperature: 215 °C or below (Package surface temperature), VP15-00-1 Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 1 time. Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, WS60-00-1 Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature). Partial heating method Pin temperature: 300 °C or below, – Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the device will be damaged by heat stress. Types of Through-hole Device µPC358C: 8-pin plastic DIP (300 mil) µPC358HA: 9-pin slim SIP Process Conditions Wave soldering Solder temperature: 260 °C or below, (only to leads) Flow time: 10 seconds or less. Partial heating method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered.
µPC358 REFERENCE DOCUMENTS QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL C10535E IC PACKAGE MANUAL C10943X GUIDE TO QUALITY ASSUARANCE FOR SEMICONDUCTOR DEVICES MEI-1202 SEMICONDUCTORS SELECTION GUIDE X10679E NEC SEMICONDUCTOR DEVICE RELIABILITY/ IEI-1212 QUALITY CONTROL SYSTEM - STANDARD LINEAR IC
µPC358 [MEMO]
µPC358 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 [MEMO]