2SC3419_04 TOSHIBA | Alldatasheet
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications.
- Low saturation voltage: V CE (sat) = 0.25 V (typ.) (I C = 500 mA, IB = 50 mA)
- High collector power dissipation: PC = 1.2 W (Ta = 25°C)
- Complementary to 2SA1356 Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 40 V Collector-emitter voltage V CEO 40 V Emitter-base voltage V EBO 5 V Collector current I C 800 mA Base current I B 80 mA Ta = 25°C 1.2 Collector power dissipation Tc = 25°C PC 5 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 40 V, IE = 0 ― ― 1.0 µA Emitter cut-off current I EBO V EB = 5 V, IC = 0 ― ― 1.0 µA Collector-emitter breakdown voltage V CEO I C = 10 mA, IB = 0 40 ― ― V hFE (1) (Note) VCE = 2 V, IC = 50 mA 70 ― 240 DC current gain hFE (2) V CE = 2 V, IC = 0.8 A 13 60 ― Collector-emitter saturation voltage V CE (sat) IC = 500 mA, IB = 50 mA ― 0.25 0.8 V Base-emitter voltage V BE V CE = 2 V, IC = 500 mA ― 0.90 1.1 V Transition frequency f T V CE = 2 V, IC = 0.5 A 50 100 ― MHz Collector output capacitance C ob V CB = 10 V, IE = 0, f = 1 MHz ― 10 ― pF Note: h FE (1) classification O: 70 to 140, Y: 120 to 240 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.)
C3419 Part No. (or abbreviation code) Characteristics indicatorLot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Collector power dissipation P C (W) Collector current I C (mA) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (mA) Collector current I C (mA) hFE – IC DC current gain h FE Collector current I C (mA) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) ( V ) Base-emitter voltage V BE (V) IC – VBE Ambient temperature Ta (°C) PC – Ta Safe Operating Area Collector current I C (mA) Collector-emitter voltage V CE (V) 1.0 Common emitter Tc = 2 5 ° C 1000 600 3 4 6 5 12 20 IB = 2 mA 2 1 200 400 800 −25 Common emitter IC/IB = 10 0.01 0.05 0.1 30 100 Tc = 100°C 1000300 10 0.03 0.3 0.5 (1) T c = Ta Infinite heat sink (2) No heat sink 0 80 120 200 160 40 (1) (2) 300 Common emitter VCE = 2 V 100 1000 30 100 1000 Tc = 100°C −25 300 3 500 −25 Common emitter VCE = 2 V 1000 400 600 800 Tc = 100°C 200 0.3 1 3 10 30 300 500 1000 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 100 3000 100 IC max (pulsed)* IC max (continuous)* DC operation Ta = 25°C VCEO max 1 ms* 10 ms* 100 ms* DC operation Tc = 25°C
- The information contained herein is subject to change without notice.
- The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
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