C3355

2SC3355 NEC | Alldatasheet

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HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET Document No. P10355EJ3V1DS00 (3rd edition) Date Published March 1997 N Printed in Japan 1985©

DESCRIPTION

The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.

FEATURES

• Low Noise and High Gain
• High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (T A = 25 /G01/G01 C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage V EBO 3.0 V Collector Current I C 100 mA Total Power Dissipation P T 600 mW Junction Temperature T j 150 /G01 C Storage Temperature T stg /G02 65 to +150 /G01 C ELECTRICAL CHARACTERISTICS (T A = 25 /G01/G01 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current I CBO 1.0 /G01 AV CB = 10 V, IE = 0 Emitter Cutoff Current I EBO 1.0 /G01 AV EB = 1.0 V, IC = 0 DC Current Gain h FE 50 120 300 V CE = 10 V, IC = 20 mA Gain Bandwidth Product f T 6.5 GHz V CE = 10 V, IC = 20 mA Output Capacitance C ob 0.65 1.0 pF V CB = 10 V, IE = 0, f = 1.0 MHz Insertion Power Gain /G01 S21e/G01 9.5 dB V CE = 10 V, IC = 20 mA, f = 1.0 GHz Noise Figure NF 1.1 dB V CE = 10 V, IC = 7 mA, f = 1.0 GHz Noise Figure NF 1.8 3.0 dB V CE = 10 V, IC = 40 mA, f = 1.0 GHz hFE Classification Class K Marking K hFE 50 to 300 PACKAGE DIMENSIONS in millimeters (inches) 5.2 MAX. (0.204 MAX.) 0.5 (0.02) 2.54 (0.1) Base Emitter Collector EIAJ JEDEC IEC : SC-43B : TO-92 : PA33 1.27 (0.05) 5.5 MAX. (0.216 MAX.) 4.2 MAX. (0.165 MAX.) 1.77 MAX. (0.069 MAX.) 14 MIN. (0.551 MIN.) 123

TYPICAL CHARACTERISTICS (T A = 25 /G01/G01 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1000 500 100 200 1 5 10 500.5 100 150 TA-Ambient Temperature-°C IC -Collector Current-mA DC CURRENT GAIN vs. COLLECTOR CURRENT PT-Total Power Dissipation-mWhFE -DC Current Gain With heat sink Free air heat sink 107.8 3.8 VCE = 10 V 0.5 1 5 10 50 70 IC -Collector Current-mA INSERTION GAIN vs. COLLECTOR CURRENT |S21e|2-Insertion Gain-dB VCE = 10 V f = 1.0 GHz 0.3 0.5 0 0.5 1 2 5 10 20 30 VCB -Collector to Base Voltage-V FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE C re-Feed-back Capacitance-pF f = 1.0 MHz 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 0 0.5 10 10 5.0 30 IC -Collector Current-mA GAIN BANDWIDTH PROUDCT vs. COLLECTOR CURRENT fT-Gain Bandwidth Product-GHz VCE = 10 V f-Frequency-GHz INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY G max -Maximum Gain-dB |S21e|2-Insertion Gain-dB VCE = 10 V IC = 20 mA G max |S21e|2

0.5 1 5 10 50 70 IC -Collector Current-mA NOISE FIGURE vs. COLLECTOR CURRENT NF-Noise Figure-dB VCE = 10 V f = 1.0 GHz INTERMODULATIOn DISTORTION vs. COLLECTOR CURRENT IM2, IM3 (dB) IM3 IM2 −30 −40 −50 −60 −70 −80 20 30 IC -Collector Current-mA 40 60 50 70 VCE = 10 V V0 + 100 dB V/50 Ω R g = Re = 50 Ω at µ IM2 IM3 f = 90 + 100 MHz f = 2 × 200 − 190 MHz S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50 /G01 f (MHz) /G01 S11/G01/G02 S11 /G01 S21/G01/G02 S21 /G01 S12/G01/G02 S12 /G01 S22/G01/G02 S22 200 400 600 800 1000 1200 1400 1600 1800 2000 0.173 0.054 0.013 0.028 0.062 0.091 0.121 0.148 0.171 0.207 /G03 80.3 /G03 77.0 /G03 57.9 81.8 82.2 80.7 80.2 80.1 80.0 79.9 13.652 7.217 4.936 3.761 3.094 2.728 2.321 2.183 1.892 1.814 103.4 85.1 74.0 62.3 58.3 52.9 44.9 36.4 30.2 21.4 0.041 0.066 0.113 0.144 0.183 0.215 0.240 0.288 0.305 0.344 73.8 71.2 69.3 67.0 64.7 61.7 58.7 50.7 46.8 39.1 0.453 0.427 0.428 0.414 0.392 0.377 0.359 0.354 0.345 0.344 /G03 21.8 /G03 26.0 /G03 30.8 /G03 37.2 /G03 43.2 /G03 51.4 /G03 58.3 /G03 67.2 /G03 80.0 /G03 90.4 VCE = 10 V, IC = 40 mA, ZO = 50 /G01 f (MHz) /G01 S11/G01/G02 S11 /G01 S21/G01/G02 S21 /G01 S12/G01/G02 S12 /G01 S22/G01/G02 S22 200 400 600 800 1000 1200 1400 1600 1800 2000 0.011 0.028 0.027 0.043 0.074 0.098 0.120 0.146 0.171 0.205 /G03 60.1 /G03 42.9 25.1 65.7 75.1 75.6 74.1 75.8 77.2 78.0 13.76 7.338 4.996 3.801 3.134 2.759 2.351 2.203 1.910 1.825 105.4 82.9 72.7 61.9 57.6 52.4 44.4 36.0 29.9 21.3 0.040 0.069 0.114 0.144 0.183 0.221 0.247 0.291 0.299 0.344 /G03 73.3 66.7 69.4 67.8 63.4 62.1 55.7 49.6 46.0 39.4 0.421 0.416 0.414 0.406 0.386 0.373 0.356 0.347 0.342 0.335 /G03 17.5 /G03 22.8 /G03 28.7 /G03 35.7 /G03 41.8 /G03 49.8 /G03 56.3 /G03 66.6 /G03 78.8 /G03 89.6

−160 −150 −140 −130 −120 −110 −100 −90 −80 −70 −60 −50 −40 −30 −20 −10 0 0.280.22 0.30 0.20 0.32 0.180.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.21 0.19 0.17 0.15 0.130.11 0.09 0.07 0.05 0.03 0.29 0.31 0.33 0.35 0.370.39 0.41 0.43 0.45 0.47 0.020.48 0.010.49 0.490.01 0.480.02 0.470.03 0.460.04 0.45 0.05 0.44 0.06 0.43 0.07 0.42 0.08 0.41 0.09 0.40 0.10 0.39 0.11 0.38 0.12 0.37 0.13 0.36 0.14 0.35 0.15 0.34 0.16 0.33 0.17 0.32 0.18 0.31 0.19 0.30 0.20 0.290.21 0.280.22 0.270.23 0.260.24 0.250.25 0.240.26 0.230.27 WAVELENGTHS TOW ARD LOAD W AVELENGTHS TOW ARD GENERATOR 2.0 6.0 4.0 3.0 1.8 1.6 1.4 1.20.90.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.0 +JX –––– Z O 0.2 0.4 0.6 0.8 1.0 0.8 0.7 0.6 0.3 0.2 0.1 0.2 1.0 0.8 0.6 0.4 0.2 1.0 0.8 0.6 0.4 0.4 0.5 5.0 3.0 4.0 1.8 2.0 1.21.00.9 1.4 1.6 REACTANCE COMPONENT R –––– ZO ) NEGATIVE REACTANCE COM PONENT POS ITIVE REACTANCE CO MPONENT 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 O 0.2 0.4 0.6 0.8 1.0 S11e, S22e-FREQUENCY S21e-FREQUENCY 90° 30° −30° 60° −60° 180° 150° −150° 120° −120° −90° 4 8 12 16 20 S21e

0.2 GHz

2.0 GHz

90° 30° −30° 60° −60° 180° 150° −150° 120° −120° −90° S12e VCE = 10 VCONDITION VCE = 10 V IC = 40 mA CONDITION VCE = 10 V IC = 40 mA CONDITION 0.2 GHz0.2 GHz IC = 20 mA S22e S11e IC = 20 mA IC = 40 mA IC = 40 mA

[MEMO]

[MEMO]

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5