2SC3209 NEC | Alldatasheet

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DESCRIPTION The 2SC3209 is designed for use in TV chroma output circuits and TV horizontal deflection output circuits. PACKAGE DIMENSIONS in millimeters (inches) 70Max. FEATURES © High voltage Vce0 2300 V (0275MAx) ton © High Electrostatic. _(E-B reverse bias, C=2 300 pF) oe ry = Discharge-Resistant VESDR: TYP. 1000V ss # z *3| ABSOLUTE MAXIMUM RATINGS ‘weal Sty 38 Maximum Temperatures 06-02 | ae > Maximum Power Dissipation (Ta= 25 °C) [f oz _ Maximum Voltages and Currents (Ta=25 °C) ($44) BE (0022) ELECTRICAL CHARACTERISTICS (Ta=25 °C) SYMBOL CHARACTERISTIC MIN, TYP. MAX. UNIT. TEST CONDITIONS hee* DC Current Gain 60 150 250 VoE = 10 V, Ic = 10mA tg Delay Time 1.0 us Voc = 30 V tr Rise Time 1.0 us 1g = 100 mA tstg Storage Time 20 us , Ip1 =—1g2=10mA tt Fall Time 1.0 us fr Gain Bandwidth Product 50 MHz Voce = 30 V, Ie =-10 mA Vespr Electrostatic-Discharge-Resistant 1000 v See Test Circuit Cob Output Capacitance 28 35 pF Veg = 30 V, IE = 0, f = 1.0 MHz Ico Collector Cutoff Current 100 nA Vp = 200 V, Ie = 0 lEBO Emitter Cutoff Current 100 nA Vee =5.0V,I¢=0 | Vee" Base to Emitter Voltage 600 670 700 mv Voce = 10 V, Io = 10 mA VcE(sat) * Collector Saturation Voltage 0.15 15 Vv Ig = 50 mA, Ip = 5.0mA Vee lsat)” Base Saturation Voltage 0.80 15 v Ig = 50 mA, Ig = 5.0 mA * Pulsed PWS300 us, duty cycles2 % Classification of heey [rom [oom To. | «| [nanos | 0-120 | 10000" | 0-20 | | Test Conditions: Vcg = 10 V,I¢=10mA oe 339

TYPICAL CHARACTERISTICS (Ta=25 °C) | SAFE OPERATING AREAS TOTAL POWER DISSIPATION vs. (TRANSIENT THERMAL COLLECTOR CURRENT vs. : . AMBIENT TEMPERATURE RESISTANCE METHOD) COLLECTOR TO EMITTER VOLTAGE ) 12 1000 ee 4 T EE EEAH duty cycles? % ) 1 [TL] pe ee ee eee ee gs” IN e Sse tieeei e771 5 os ——{ Fo tT Til z “TI aa tN 8 io NY i] 3 eee B04 3 ASoatt SEH s TTI] 40 uA BELT EN] § ESS 8 eee EON] CIC, «CEPR? . CN SCO EE Pe a 0 0 25 50 75 100 125° 150 Wy 20 50 100 200 500 1000 co) 2 4 6 8 10° 120«14 Ta—Ambient Temperature—"C VcE—Collector to Emitter Voltage—V VcE—Collector to Emitter Voltage—V COLLECTOR SATURATION VOLTAGE, COLLECTOR CURRENT vs. DC CURRENT GAIN vs. BASE SATURATION VOLTAGE vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT COLLECTOR CURRENT HH act oe | sete PETG pec ET EERE S eto | F 0} =f, Afar iat 22 COC ott 5 oS Ap FF] % sof tii in Tan-25 CHANG] «68 S tel _Nae(sat) Lg 5 oon E ~ Hi aes Cn hia 8s | SSS S 0 aa |S 20 EEA | )ta=75 i HT 2° Beal aati ¥ to | 8 seeps ba 0 7 ll

2 RARE Seer i boos BEBE SN emas oc

COL PEELE 0.102051 2 5 1020 501002005001000 § By 45 EES ae 3 go. 04 05 06 07 08 09 10 '¢—Collector Current—mA SFP oo LTT CHT ! VBE —Base to Emitter Voltege—-V ’'T- 28 10 20 60 100200 5001000 Ig—Collector Current—mA. GAIN BANDWIDTH PRODUCT vs. ourP SWITCHING TIME vs. “master cunnen QUTPUT CAPACITANCE ve SE ne ee Fr] Fe = Ss SSecs eee Q SSeS Se ee) Se [ Ss

3 OS 2 SE 6 be CE i

z Sea ea % 20 EA 2 r Pa Ret g COMMUN U 8 1 se oc se |] "H feadl g py SS Se Ge EES tas 3 pot a 8 Sa e SER IS ne Me SaaS gt os Eee niet t 2 og ee aii ei Se SEER “coiote

8 Coa 3 I HiT TT} 6k, 9 RTI ewcs'

bf Toe 30 a sorao70 wootec fF gy SLM LP? as L _ . é ESSEES duty cycles2 % Vop~Collector to Base Voltage—V FE os SN rete

0 PY OAE sensi eOectinicns:

“tT =$=10 =80—100 500 1000 32 oop PoE Spar | "e-Emier Carent—ma FS ool I Til TT TT 10 20 50 100 200 500 1000 I¢—Collector Current—mA, 340

ELECTROSTATIC-DISCHARGE-RESISTANT TEST CIRCUIT STOR Open COLLECTO} TEST CONDITION 1) E-B reverse bias 2) C= 2300 pF OUT. JUDGEMENT REJECT; BVEgo waveform defect . Va =2300 pF Asa result if D.U.T. is not rejected, apply higher voltage to capacitor and test again. 341