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Technical content
0.15 A , 50 V
NPN Plastic-Encapsulated Transistor Elektronische Bauelemente 14-Mar-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A CE K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High Current Capability High DC Current Gain Small Package
APPLICATIONS
Audio Amplifier Applications AM Amplifier Applications CLASSIFICATION OF hFE Product-Rank 2SC3199-O 2SC3199-Y 2SC3199-GR 2SC3199-BL Range 70~140 120~240 200~400 300~700 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V CBO 50 V Collector to Emitter Voltage V CEO 50 V Emitter to Base Voltage V EBO 5 V Collector Current - Continuous I C 150 mA Collector Power Dissipation P C 400 mW Thermal Resistance From Junction To Ambient R θJA 312 °C / W Junction, Storage Temperature T J, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V (BR)CBO 50 - - V I C=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V (BR)CEO 50 - - V I C=1mA, IB=0 Emitter to Base Breakdown Voltage V (BR)EBO 5 - - V I E=0.1mA, IC=0 Collector Cut – Off Current I CBO - - 0.1 μA V CB=50V, IE=0 Emitter Cut – Off Current I EBO - - 0.1 μA V EB=5V, IC=0 DC Current Gain h FE 70 - 700 V CE=6V, IC=2mA Collector to Emitter Saturation Voltage V CE(sat) - - 0.25 V I C=100mA, IB=10mA Collector Output Capacitance C ob - - 3.5 pF V CB=10V, IE=0, f=1MHz Transition Frequency f T 80 - - MHz V CE=10V, IC=1mA Emitter Collector Base TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76