2SC3148 TOSHIBA | Alldatasheet

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TOSHIBA 2$C€3148 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE. INDUSTRIAL APPLICATIONS SWITCHING APPLICATIONS. Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. JosMax, $364.2 © Excellent Switching Times (I¢=0.8A) ol fay. tp=1.0s Max., tp= 1.0/8 Max. 6 2 © High Collector-Emitter Breakdown Voltage : VCRO=800V - a MAXIMUM RATINGS (Ta = 25°C) 3 i CHARACTERISTIC SYMBOL UNIT || E | Collector-Base Voltage | Vcpo [| 900 | Vv | gl Collector-Emitter Voltage att § Emitter-Base Voltage VEBO a “ty Collector Current A rs — oy [ie | 2. COLLECTOR (HEAT SINK) Collector Power Ww 3. EMITTER Dissipati | 40 — Penne = Junction Temperature cay Sea Storage Temperature Range —55~150 . TOSHIBA —_2-10A1A ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 1.9g CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Vop=800V, Im=0 [ — [| — [100 | yA | Emitter Cut-off Current VEB=7V, Ic=0 ;— |= | 1 {ma | Collector-Base Breakdown eke Famenoicrimn so [om = [= [| Collector-Emitter Breakdown _ = a Famcnae=imn ise [oe | — | — | ¥ | DC Current Gain Vow=5V, I¢=0.8A jiu f[—{[-] | Collector-Emitter Saturation sor foram mente | - [= [os] ¥ Base-Emitter Saturation Voltage I¢=0.8V, Ip=0.16A | — | — | 12] v | Voc = 4Q0V ‘BI a : |= | - [9] ‘WTrwe wih wee . . I Ip Smening ine [Storege Tine Most ae | — | - | a] Bt = 0.084 A Tp2 . iB1= — 0.20. Fall Time f DUTY CYCLES 1% 10

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halfunction or fa due to ther inherent electrical senstivy and wuinerapity to physial sess. fis the responsi of the buyer, when utliing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as fat forth in the most recent products specications. Also, please Keep in mind the. precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-09-01 1/3

TOSHIBA 2$C€3148 Ic — VCE 100 hre — Ic moat common eurrren | | [| | EEE) common enrrren < Te = 25°C [Le 800 a 7 3, __ | -——m] sof EET] Ver =8v 2 eer Berens CEI Bol foe 2 CO Co z Za==sseeeeees 3 Sto

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yo ‘B= _| TTT TT iy 9c s_ LITT TT TTT TT rr bos O1 05 1 3 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR CURRENT Ic (A) VBE (sat) — IC eT Tint , [oom tp. ee fee LTT UT 2. SSS Bg SHE

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es SCO § os tN Ati g5 ip ee fH SC me Se) SCI i a 2 UII |e => pn COMMON EMITTER 37 ot ets +H eee EH Ic/Ip=s es ee os | 0.1) a an 0.03 0.1 0.3 1 3 0 0108 1 5 COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT Ic (A) SWITCHING TIME - Ic Io = VBp SS SSS SSS Saree

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2 aan Ill | ETHIE | TTI Litt TAY : 0 02 0a 08 08 1012 305-0. 08 1 3 10 BASE-EMITTER VOLTAGE Vpp (V) COLLECTOR CURRENT Ic (A) Q61001EAA2” @ The information contained herein is presented only as a guide for the applications ‘of our products. No responsibility is assumed by TOSHIBA CORPORATION for any inrmgerments df intel propery-ov athe rights Bf the third patie, whch may rest fom Ms use. Ho cense Ts granted by implication or otherwise under any intellectual Broperty oF ‘other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1997-09-01 2/3

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eee er ee el Ea 2 CURVES SHOULD BE APPLIED IN THERMAL 8 LIMITED AREA. 5 trot —_®§ ATRYN NOS 2 (SINGLE NONREPETITIVE PULSE) s COED NATIT é © INFINITE HEAT SINK

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& ooo TH TP TAT PULSE WIDTH ty (s) | NN * ann |_| IN 0.03| NONREPETITIVE hI PULSE Te=25°C es is CURVES MUST BE DERATED = voro max. +i 0.005] LINEARLY WITH INCREASE. |——-r 77 1]}] 0.003 LEN TEMPERATURE. Prt 3 10 30 100 300 1000 Pc - TC COLLECTOR-EMITTER VOLTAGE Vcg (V) 50 TTLLLILLLILLIL tt > 40 & “LEN TEEPE PT Te | go LNT TTT tT a Oe 2 11 INT ETT TTT e [LITT TIN-E TTT TT gg | TTT IN TET Tt se [ITT T ITN Tet ttt it i | XI TTT | 04080120 160-200-220 CASE TEMPERATURE Te (°C) 1997-09-01 3/3