2SC3074_05 TOSHIBA | Alldatasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications

  • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
  • High speed switching time: tstg = 1.0 µs (typ)
  • Complementary to 2SA1244 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 5 V Collector current I C 5 A Base current I B 1 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 50 V, IE = 0 ― ― 1 µA Emitter cut-off current I EBO V EB = 5 V, IC = 0 ― ― 1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) (Note) VCE = 1 V, IC = 1 A 70 ― 240 DC current gain hFE (2) V CE = 1 V, IC = 3 A 30 ― ― Collector-emitter saturation voltage V CE (sat) I C = 3 A, IB = 0.15 A ― 0.2 0.4 V Base-emitter saturation voltage V BE (sat) I C = 3 A, IB = 0.15 A ― 0.9 1.2 V Transition frequency f T V CE = 4 V, IC = 1 A ― 120 ― MHz Collector output capacitance C ob V CB = 10 V, IE = 0, f = 1 MHz ― 80 ― pF Turn-on time t on ― 0.1 ― Storage time t stg ― 1.0 ― Switching time Fall time t f IB1 = −IB2 = 0.15 A, Duty cycle ≤ 1% ― 0.1 ― µs Note: h FE (1) classification O: 70 to 140, Y: 120 to 240 Marking C3074 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) 20 µs INPUT IB1 IB2 OUTPUT VCC = 30 V IB1 10 Ω IB2

VCE – IC VCE – IC IC – VCE VCE – IC Collector-emitter voltage V CE (V) Collector current I C ( A ) Collector-emitter voltage VCE ( V ) Collector current I C (A) Collector-emitter voltage V CE (V) Collector current I C (A) Collector-emitter voltage V CE (V) Collector current I C (A) DC current gain h FE Collector current I C (A) Collector current I C (A) Collector-emitter saturation voltage VCE (sat) (V) Common emitter Tc = 100°C 90 100 2 4 6 8 12 10 IB = 10 mA 1.2 Common emitter Tc = 2 5 ° C 1.0 0.8 0.6 0.4 0.2 1 2 3 4 5 6 7 150 100 80 500 300 200 IB = 10 mA Common emitter T c = 100°C 150 100 80 500 120 200 IB = 10 mA 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 Common emitter Tc = −55°C 120 160 500 300 40 200 250 IB = 20 mA 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 hFE – IC VCE (sat) – IC Tc = 100°C Common emitter VCE = 1 V −55 1000 100 300 500 0.03 0.1 0.3 1 3 10 Common emitter IC/IB = 20 Tc = −55°C 100 0.1 0.3 0.5 0.01 0.03 0.05 0.03 0.1 0.3 1 3 10

PC – Ta VBE (sat) – IC IC – VBE Collector current I C (A) Base-emitter saturation voltage VBE (sat) (V) Base-emitter voltage V BE (V) Collector current I C ( A ) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C ( A ) Ambient temperature Ta (°C) Collector power dissipation P C (W) 0.1 0.03 Common emitter IC/IB = 20 100 Tc = −55°C 0.1 0.3 1 3 10 0.3 0.5 Common emitter VCE = 1 V −55Tc = 100°C (1) T c = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 20 40 60 80 100 120 160 (1) (2) (3) 140 *: Single nonrepetitive pulse Tc = 2 5 ° C Curves must be derated linearly with increase in temperature. 0.01 0.1 IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* DC operation Tc = 25°C 30 100 3 10 0.3 1 0.03 0.05 0.1 0.3 0.5

  • The information contained herein is subject to change without notice.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
  • TOSHIBA is continually working to improve the quality an d reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliab ility or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619EAARESTRICTIONS ON PRODUCT USE