2SC3039 WINGS | Alldatasheet
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Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA LIMITING VALUES SYMBOL PARAMETER CONDITIONS TYP MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 500 V VCEO Collector-emitter voltage (open base) - 300 V IC Collector current (DC) - 7A ICM Collector current peak value - A Ptot Total power dissipation T mb - 50 W VCEsat Collector-emitter saturation voltage IC = 3.0A; IB = 0.3A - 2V VF Diode forward voltage I F = 3.0A 1.5 2.0 V tf Fall time I C =3A,IB1=-IB2=0.3A,VCC =60V 0.4 1.0 s SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 500 V VCEO Collector-emitter voltage (open base) - 300 V VEBO Emitter-base oltage (open colloctor) 5 V IC Collector current (DC) - 7 A IB Base current (DC) - 2 A Ptot Total power dissipation Tmb -5 0 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 SYMBOL PARAMETER CONDITIONS TYP MAX UNIT ICBO Collector-base cut-off current V CB =400V - 0.2 mA IEBO Emitter-base cut-off current V EB =5V - 0.2 mA V(BR )CEO Collector-emitter breakdown voltage IC =1mA 300 V VCEsat Collector-emitter saturation voltages IC = 2.0A; IB = 0.5A - 2 V hFE DC current gain I C = 0.8A; VCE = 5V 15 100 fT Transition frequency at f = 5MHz I C = 1A; VCE = 12V 25 - MHz C c Collector capacitance at f = 1MHz V CB = 10V 120 - pF ton On times I C =3A,IB1=-IB2=0.3A,VCC =60V 1.0 us ts Tum-off storage time I C =3A,IB1=-IB2=0.3A,VCC =60V 2.5 us tf Fall time I C =3A,IB1=-IB2=0.3A,VCC =60V 0.4 1.0 us
ELECTRICAL CHARACTERISTICS
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com