2SC2898 HITACHI | Alldatasheet
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Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline 1. Base 2. Collector (Flange) 3. Emitter TO-220AB 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 500 V Collector to emitter voltage V CEO 400 V Emitter to base voltage V EBO 7V Collector current I C 8A Collector peak current I C(peak) 16 A Base current I B 4A Collector power dissipation P C *1 50 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter sustain voltage VCEO(sus) 400 — — V I C = 0.2 A, RBE = ¥ , L = 100 mH Collector to emitter sustain voltage V CEX(sus) 400 — — V I C = 8 A, IB1 = 1.6 A, IB2 = –0.8 A, VBE = –5 V, L = 180 mH, Clamped Emitter to base breakdown voltage V(BR)EBO 7— — VI E = 10 mA, IC = 0 Collector cutoff current I CBO ——5 0 mAV CB = 400 V, IE = 0 ICEO ——5 0 mAV CE = 350 V, RBE = ¥ DC current transfer ratio hFE1 15 — — V CE = 5 V, IC = 4 A*1 hFE2 7— — V CE = 5 V, IC = 8 A*1 Collector to emitter saturation voltage VCE(sat) — — 1.0 V I C = 4 A, IB = 0.8 A*1 Base to emitter saturation voltage VBE(sat) — — 1.5 V Turn on time t on — — 0.8 msI C = 8 A, IB1 = –IB2 = 1.6 A, Storage time t stg — — 2.0 msV CC @ 150 V Fall time t f — — 0.8 ms Note: 1. Pulse test 0 50 100 150 Case temperature TC (°C) Collector power dissipation PC (W) Maximum Collector Dissipation Curve 0.01 300 1,000 Collector to emitter voltage VCE (V) Collector current IC (A) Area of Safe Operation 100 1.0 0.1 13 3 0 10 100 IC(max)(Continuous) IC(peak) Ta = 25°C, 1 Shot µs50 µs250 µs 1 ms DC Operation (T C = 25 °C) PW = 10 ms
Case temperature TC (°C) Collector current derating rate (%) Collector Current Derating Rate IS/B Limit Area 10 (s) Transient Thermal Resistance 1.0 0.03 0.01 0.1 1.00.01 10 (ms)0.1 1.00.01 0.1 0.3 Thermal resistence θj-c (°C/W) 10 ms–10 s 10 µs–10 ms TC = 25°C 200 500 Collector to emitter voltage VCE (V) Reverse Bias Area of Safe Operation 100 300 4000 IB2 = –0.8 A 450 V, 1.5 A
300 V, 16 A
400 V, 8 A Collector current IC (A) 600 Base to emitter resistance RBE (Ω ) Collector to Emitter Voltage vs. Base to Emitter Resistance 400 300 1 k 10 k 100 k 1 M100 500 IC = 1 mA Collector to emitter voltage V(BR)CER (V)
Collector to emitter voltage VCE (V) Typical Output Characteristics 13 40 IB = 0 TC = 25°C 0.05 A 0.1 0.2 0.30.40.50.6 Collector current IC (A) 0.8 2.0 Base to emitter voltage VBE (V) Typical Transfer Characteristics 0.4 1.2 1.60 TC = 25°C VCE = 5 V Collector current IC (A) 100 Collector current IC (A) DC current transfer ratio hFE 0.03 0.1 1.0 10 DC Current Transfer Ratio vs. Collector Current TC = –25°C VCE = 5 V 0.01 0.3 75°C 25°C Base current IB (A) Collector to emitter saturation voltage VCE(sat) (V) 0.1 0.03 0.1 0.3 10 0.01 0.3 1.0 Collector to Emitter Saturation Voltage vs. Base Current IC = 1 A TC = 25°C 0.01 0.03 1.0 3
2 A 5 A
Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 1.0 0.03 0.03 0.1 1.0 3 0.01 0.1 0.3 Base to Emitter Saturation Voltage vs. Collector Current TC = 25°C IC = 5 IB 0.01 0.3 IC = 5 IB1 = –5 IB2 VCC = 150 V tstg tf ton 0.1 10 3 Collector current IC (A) Switching time t (µs) Switching Time vs. Collector Current 0.03 0.1 0.030.01 0.3 1.0 0.01 0.3 1.0 IC = 8 A IB1 = IB2 = 1.6 A R L = 19 Ω VCC = 150 V tstg tf ton 50 125 Case temperature TC (°C) Switching time t (µs) Switching Time vs. Case Temperature 0.05 0.3 0.1 250 75 100 1.0
0.76 – 0.1 10.16 – 0.2 2.54 – 0.5 1.26 – 0.15 4.44 – 0.2
2.7 MAX
1.5 MAX
11.5 MAX
9.5 8.0 1.27 6.4 +0.2 –0.1 φ 3.6 +0.1 -0.08 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Unit: mm
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