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  • Ultrasmall package enabiling compactness and slimness of sets.
  • High fT and small cre (fT=320MHz typ, cre=0.95pF typ). Electrical Characteristics at Ta = 25˚C 1 : Base 2 : Emitter 3 : Collector SANYO : CP retemaraPl obmySs noitidnoCs gnitaRt inU egatloVesaB-ot-rotcelloCV OBC 03V egatloVrettimE-ot-rotcelloCV OEC 02V egatloVesaB-ot-rettimEV OBE 5V tnerruCrotcelloCI C 03A m noitapissiDrotcelloCP C 051W m erutarepmeTnoitcnuJj T 521 erutarepmeTegarotSg tsT 521+ot55– retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am tnerruCffotuCrotcelloCI OBC V BC I,V01= E 0=1 .0A μ tnerruCffotuCrettimEI OBE V BE I,V4= C 0=1 .0A μ niaGtnerruCCD h EF V EC I,V6= C Am1= *04* 072 tcudorPhtdiwdnaB-niaGf T V EC I,V6= C Am1= 0020 23z HM ecnaticapaCrefsnarTesreveRC er V BC zHM1=f,V6= 7.05 9.02 .1F p tnatsnoCemiTrotcelloC-ot-esaBC 'bbr C V EC I,V6= C zHM9.13=f,Am1=2 10 2s p erugiFesioNF NV EC I,V6= C zHM001=f,Am1= 0.3B d niaGrewoPG PV EC I,V6= C zHM001=f,Am1= 52B d * : The 2SC2814 are classified as follows by hFE at 1mA : (Note) Marking : F hFE rank : 2, 3, 4, 5 knaR 2345 h EF 08ot040 21ot060 81ot090 72ot531 2SC2814 NPN Epitaxial Planar Silicon Transistors High-Friquency General-Purpose Amplifier Applications

Rev.0 I Page 2 of 5 I www.onsemi.com NF, PG Test Circuit VCEVBE to 5pF to 30pF to 30pF to 22pF to 22pF L1 : 1mmø plated wire 10mmø 4T, tap : 2T from VBE side. L2 : 1mmø plated wire 10mmø 7T, tap : 1T from VCE side. L3 : 1mmø enameled wire 10mmø 3T. L1 L2 INPUT OUTPUT 50Ω 50Ω 02468 1 0 100 IC -- VCE ITR05127 IB -- VBE ITR05128 5μA 30μA 25μA 20μA 15μA 10μA 1.0 325 107325 7 325 1007 fT -- IC ITR05130 VCE=6V hFE -- IC ITR05129 1000 100 IB=0 1.0 235 7 100.1 235 7 235 1000 100 VCE=12V VCE=6V 6V3V 100 1.0 23 5 1070.1 23 5 7 2 VCE=3V rbb'Cc -- IC ITR05132 f=31.9MHz 1.0 23 5 107 23 5 Cre -- VCB ITR05131 f=1MHz 1.0 12V Collector Current, IC –m A Collector-to-Emitter Voltage, VCE –V Base-to-Emitter Voltage, VBE –V Base Current, IB – μA DC Current Gain, hFE Collector Current, IC –A Reverse Transfer Capacitance, Cre – pF Output Capacitance, rbb' Cc – ps Collector-to-Base Voltage, VCB –V Gain-Bandwidth Product, fT – MHz Collector Current, IC –m A Collector Current, IC –m A

Rev.0 I Page 3 of 5 I www.onsemi.com 1.0 23 5 7 10 23 5 7 100 1.0 0.1 VCE (sat) -- IC ITR05133 PC -- Ta ITR05134 IC IB =10 0 20 40 60 80 100 120 140 160 140 120 100 Collector Current, IC –A Collector-to-Emitter Saturation Voltage, VCE(sat) – V Collector Dissipation, PC –m W Ambient Temperature, Ta – ˚C 1.0 0.1 100 3 5 1.072 3 5 7 10 cie gie VCE=6V f=10MHz Output Admittance yoe -- IC goe – mS, coe – pF ITR05138 Input Admittance yie -- IC gie – mS cie – pF VCE=6V f=10MHz ITR05137 53 1.072 3 5 7 10 1.0 VCE=6V f=1MHz ITR05136 Input Admittance yie -- IC gie – mS cie – pF 0.01 0.1 100 35 2 1.073 5 107 VCE=6V f=1MHz ITR05135 Output Admittance yoe -- IC goe – μS, coe – pF 1.0 3 1075 1.0 327 5 cie gie goe coe goe coe 1.0 Input Admittance yie -- VCE gie – mS, cie – pF ITR05139 231.0 57 10 2 IC=1mA f=100MHz ITR05140 Reverse transfer admittance yre -- VCE gre – μS cre – pF 100 0.1 1.0 7 1.0 7532 10 2 cie gie IC=1mA f=100MHz cre gre Collector Current, IC – mA Collector Current, I C –m A Collector Current, IC – mA Collector Current, I C –m A Collector-to-Emitter Voltage, VCE – V Collector-to-Emitter Voltage, V CE –V

Rev.0 I Page 4 of 5 I www.onsemi.com 1.0 Forward transfer admittance yfe -- VCE gfe, bfe – mS ITR05141 231.0 57 10 2 IC=1mA f=100MHz Output Admittance yoe -- VCE goe – mS, coe – pF ITR05142 1.0 22 35 7 10 1.0 0.1 gfe --bfe IC=1mA f=100MHz coe goe Collector-to-Emitter Voltage, VCE – V Collector-to-Emitter Voltage, V CE –V VCE=6V f=100MHz Output Admittance yoe -- IC goe – mS, coe – pF ITR05146 Forward transfer admittance yfe -- IC gfe, bfe – mS 100 5 1.072 3 5 7 VCE=6V f=100MHz ITR05145 53 1.072 3 5 7 1.0 0.1 VCE=6V f=100MHz ITR05144 Input Admittance yie -- IC gie – mS, cie – pF 1.0 35 2 1.073 5 7 VCE=6V f=100MHz ITR05143 Reverse transfer admittance yre -- IC gre – μS cre – pF 100 1.0 37 5 1.0 327 5 cie gie gre cre gfe goe coe PG, NF -- IC ITR05147 35 7 1.0 35 7 102 VCE=6V f=100MHz See specified Test Circuit. NF PG --bfe Collector Current, IC – mA Collector Current, I C –m A Collector Current, IC –m A Collector Current, IC –m A Voltage Gain, PG –d B Noise Figure, NF Collector Current, IC –m A

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