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WEJ ELECTRONIC CO.,LTD 2SC2655 TRANSISTOR (NPN)
FEATURES
P CM: 900 mW (Tamb=25 ℃ ) Collector current I CM: 2 A Collector-base voltage V (BR)CBO: 5 0 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic=10mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 1 µA Emitter cut-off current IEBO VEB=5V, IC=0 1 µA hFE(1) VCE=2V, IC=500mA 70 240 DC current gain hFE(2) VCE=2V, IC=1.5A 40 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=0.05A 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A, IB=0.05A 1.2 V Transition frequency fT V CE=2V, IC=0.5A 100 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF Tune on Time ton 0.1 Storage Time tstg 1.0 Switch time Fall Time tf Vcc=30V, Ic=1A, IB1=-IB2=0.05A 0.1 µs CLASSIFICATION OF h FE(1) Rank O Y Range 70-140 120-240 TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 2SC2655 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS