DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 28-Mar-2011 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

 Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A)  High speed switching time:tstg=1μs(Typ.)  Complementary to 2SA1020 CLASSIFICATION OF hFE (1) Product-Rank 2SC2655-O 2SC2655-Y Range 70-140 120-240 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V CBO 50 V Collector to Emitter Voltage V CEO 50 V Emitter to Base Voltage V EBO 5 V Collector Current - Continuous I C 2 A Collector Power Dissipation P C 0.9 W Junction, Storage Temperature T J, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V (BR)CBO 50 - - V I C=100μA, IE=0 Collector to Emitter Breakdown Voltage V (BR)CEO 50 - - V I C=10mA, IB=0 Emitter to Base Breakdown Voltage V (BR)EBO 5 - - V I E=100μA, IC=0 Collector Cut-Off Current I CBO - - 1 μA V CB=50V, IE=0 Emitter Cut-Off Current I EBO - - 1 μA V EB=5V, IC=0 DC Current Gain hFE (1) 70 - 240 VCE=2V, IC=0.5A hFE (2) 40 - - V CE=2V, IC=1.5A Collector to Emitter Saturation Voltage V CE(sat) - - 0.5 V I C=1A, IB=0.05A Base to Emitter Saturation Voltage V BE(sat) - - 1.2 V I C=1A, IB=0.05A Transition Frequency f T - 100 - MHz V CE=2V, IC=0.5A Collector Output Capacitance C ob - 30 - pF V CB=10V, IE=0, f=1MHz Switch Time Turn-on Time T on - 0.15 - μs VCC=30V IB1= -IB2=0.05A IC=1A Storage Time T s - 2 - Fall Time T f - 0.15 - TO-92MOD  Emitter  Collector  Base REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.50 6.50 H 1.70 2.05 B 8.00 9.00 J 2.70 3.20 C 12.70 14.50 K 0.85 1.15 D 4.50 5.30 L 1.60 Ma x E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min G 1.50 TYP. A C E K F D B G H JL M N

2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 28-Mar-2011 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 28-Mar-2011 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES