C2611 KEXIN | Alldatasheet
Document overview
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Technical content
1.80+0.1 -0.1 4.50+0.1 -0.1 2.50+0.1 -0.10.80+0.1 -0.1 4.00+0.1 -0.1 0.53+0.1 -0.10.48+0.1 -0.1 1.50+0.1 -0.1 0.44+0.1 -0.1 2.60+0.1 -0.10.40+0.1 -0.1 3.00+0.1 -0.1 SOT-89 Unit: mm 1. Base 2. Collector 3. Emiitter 1 2 3 www.kexin.com.cn NPN Power Transistor C2611 ■ Features
- Collector-emitter Voltage: V(BR)CEO=400V
- Collector Current: IC=0.2A ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current -Continuous IC 0.2 A Collector Dissipation PC 0.5 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100μA , IE = 0 600 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , IB = 0 400 V Emitter-base Breakdown voltage V(BR)EBO IE = 100μA , IC = 0 7 V Collector-base cut-off current ICBO VCB = 600V , IE = 0 100 μA Emitter cut-off current IEBO VEB=7V,IC=0 100 μA VCE = 20V , IC = 20mA 10 40 VCE = 10V , IC = 0.25mA 5 Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 10 mA 1.2 V Fall time tf IB1=-IB2=5mA, IC=50mA, VCC=45V 0.3 μs Storage time ts IB1=-IB2=5mA, IC=50mA, VCC=45V 1.5 μs Transition frequency fT VCE = 20 V , IC = 20 mA , f = 1 MHz 8 MHz hFEDC current gain ■ hFE Classification Rank hFE 10～15 15～20 20～25 25～30 30～35 35～40
2 www.kexin.com.cn SMD Type Transistors C2611 ■ Typical Characteristics