2SC2555 TOSHIBA | Alldatasheet
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TOSHIBA 2$C2555 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING INDUSTRIAL APPLICATIONS APPLICATIONS. Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. 1S.9MAX. 3.2402 bd a, | 4] 4 ry + = e Excellent Switching Times ) 3 : tp=1.0us (Max.), tp=1.0s (Max.) at IG=4A cl I & etal & e@ High Collector Breakdown Voltage : VcRQ=400V mh ty i “ = MAXIMUM RATINGS (Ta = 25°C) 2.00.3 i i a +o3a PU OY 2 CHARACTERISTIC SYMBOL 10-025 5.05202 5.ast02 Collector-Base Voltage 3g 2 Collector-Emitter Voltage | Vowo | 400 [ v_ |} 3) *2 38 Emitter-Base Voltage “f= Collector Current DC | te | tT A [Pulse | cp =| 0 | A Base Current [m | 4 [ a 2. COLLECTOR (HEAT SINK) Collector Power Ta=25°C 3. EMITTER issipa = 25°C Storage Temperature Range —55~150 TOSHIBA 2-16B1A ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 4.6 CHARACTERISTIC SYMBOL TEST CONDITION Collector Cutoff Current | topo [Vop=400v, p=0 | — [| — | 100 | pa | Emitter Cut-off Current | Ippo _| VEB=7V, Ic=0 | — | — | 1] ma | Collector-B: Breakd Collector-Emitter Breakdown "= powaoemnee [f= P= pe [brea |Vom=sV, Io=1A | 15 [| — | — | DC Current Gain hrg (2) |VcE=5V, Io=4A | 10 | — | — | Saturation | Collector-Emitter Ig=4A, Ip=0.8A Se Voltage Base-Emitter | VBE (sat) [Ic=4A, Ip=0.8A | — | — | 15 | 20, = ey me oe |= | - | _ 2 ee Time ms Storage Time re 2 Pur |= | - | 2) “ INPUT pus PUT Ip2 Fall Time te 1p1=—Ip2=0.4A 1.0 DUTY CYCLES 1% 9610016082 malfunction or fail due to thelr inherent electrical sens tty and wulneraiity to physical stress Is the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as fat forth in the most recent products specications. Also, please Keep in mind the. precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-09-01 1/2
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