C228 MOTOROLA | Alldatasheet
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MOTOROLA SC {DIODES/OPTOF OL DeEfb3b7255 0079058 7 | a TH-25-/7 Silicon Controlled Rectifier C228( )3 Reverse Blocking Triode Thyristor C229 «+. designed for industrial and consumer applications such as power supplies, Series battery chargers, temperature, motor, light and welder controls. . © Economical for a Wide Range of Uses @ High Surge Current — Itsy = 300 Amps. SCRs © Low Forward “On” Voltage — 1.2 V (Typ) @ [tm = 35 Amps 35 AMPERES RMS © Practical Level Triggering and Holding Characteristics — 10 mA (Typ) @ 400 thru 600 VOLTS Te = 26°C © Rugged Construction in Either Pressfit, Stud, or isolated Stud Packages © Glass Passivated Junctions for Maximum Reliability . 6 : pop ox MAXIMUM RATINGS Repetitive Peak Off-State Voltage, Note 1 VoRM Volts _ (Ty = -40to +125°C) and (D 228A, C228A3, C2298 VRRM 100 KE C2288, C228B3, C2298 200 Y LG} 2zeD, 22803, €2290 400 QF case a10-02 C228M, C228M3, C229M. 600 STYLE 1 H Non-Ropotitive Reverse Voltage Volts 6229 Series I (Ty = —40 to +125°C) | 228A, C228A3, C229A 150 } C2288, C228B3, C229B 300 C228D, C228D3, C229D 500 228M, C228M3, C229M. 720 ' Peak Surge Current itsm Amps " : (One Cycle, 60 Hz, Tc = —40 to +125") [ = | 0728 Series Circuit Fusing Considerations Aes > (Tc = —40 to +126°C, t = 1 to 8.3 ms) GP [ Post Forward Gow Curent i tc | 2 | ape | erie caast V8 Sree [sudtowe ST SSC~d P| ‘Note 1. VpRM and VaRM for all types can be applied on a continuous de basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with @ negative potential on the anode. MOTOROLA THYRISTOR DEVICE DATA 3-133
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C228 © C228( )3 ¢ C229 Series ‘THERMAL CHARACTERISTICS [Characteristic [Symbol | Max | Unit _| Thermal Resistance, Junction to Case "Cw C228 and C229 Series aa" || [| ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) [SS—Characterstio | Symbot | min | typ | Max | Unit | Peak Forward or Reverse Blocking Current IRM. [RRM reamerte (|= l-lrlal To = 125°C mA et cd Gate Trigger Current (Continuous de) ier pee a eee (Vp = 6 Vdc, RL = 50 Ohms, Tc = —40°C) 80 fetes | [f= |e ("| (Vp = 12 Vde, RL = 80 Ohms, Tc = 25°C) (Vp = 6 Vdo, RL = 80 Ohms, Tc = —40°C) REESE eee PT (Rated VpRM, RL = 1000 Ohms, Tc = +125°C) PER een | == (Anode Voltage = 24 V, gate open) Te = -40°C 150, Pasties [P| (itm = 35 Ade, Igy = 40 mAdc) PER asee we | [= fa] = |" (tM = 10 A, IR = 10 A) (itm = 104, IR = 104, Tc = 100°C) Forward Voltage Application Rate Vis 3 Bie |? |= | rroune 1 - CURRENT DERATING MounE2 ~ oURRENT nenATaNG (HALF-WAVE RECTIFIED SINE WAVE) (FULL-WAVE RECTIFIED SINE WAVE) z BK Fo. DS SN gt TTY NNN 2 ol LTT ptr TNT Ba [i TUT ITT | 5 = BF sea AVERAGE om TATE CURRENT bum Es rr AVERAGE ONGTATE CURRENT AP MOTOROLA THYRISTOR DEVICE DATA 3-134 . : -