2SC2062S ROHM | Alldatasheet
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Rev.A 1/2 High-gain Amplifier Transistor (32V, 0.3A) 2SC2062S zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) E C B C B E : Emitter : Collector : Base zExternal dimensions (Unit : mm) Taping specifications SPT 0.45 2.5 (1) (2) (3) (15Min.) 5.0 3.0 3Min. 0.450.5 4.0 2.0 (1)Emitter (2)Collector (3)Base zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 0.3 0.3 150 −55 to +150 Unit V V V A W Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCES BVEBO ICBO IEBO fT Cob 200 2.5 0.1 0.1 − ∗ V V V µA µA MHz pF IC=100µA IC=10mA IE=100µA VCB=30V VEB=12V VCE(sat) −− 1.4 V IC/IB=200mA/0.2mA hFE 10000 −−− VCE/IC=3V/0.1A VCE=5V , IE= −10mA , f=100MHz VCB=10V , IE=0A , f=1MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Output capacitance Collector-emitter saturation voltage ∗ Transition frequency of the device. zPackaging specifications and hFE Type 2SC2062S SPT C TP 5000 Package hFE Code Basic ordering unit (pieces)
Rev.A 2/2 zElectrical characteristics curves 0 1.0 2.0 COLLECTOR CURRENT : Ic (mA) COLLECTOR - EMITTER VOLTAGE : VCE (V) 100 200 300 400 500 Fig.1 Typical output characteristics ( Ι ) Ta=25°C IB=0µA 2.0 4.0 6.0 8.0 18 20 COLLECTOR CURRENT : Ic (mA) COLLECTOR - EMITTER VOLTAGE : VCE (V) 100 Fig.2 Typical output characteristics ( ΙΙ ) Ta=25°C IB=0µA 0.2 0.4 0.8 1.2 1.6 1.8 2.0 2.4 BASE EMITTER VOLTAGE : VBE(on) (V) COLLECTOR CURRENT : IC (mA) 2.2 2.0 1.8 1.6 1.4 1.0 2.0 5.0 10 20 50 100 200 500 1000 1.2 1.0 0.8 0.6 0.4 Fig.3 Base emitter 'ON' voltage vs. collector current Ta=25°C VCE=5V COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) Fig.6 Collector emitter saturation voltage vs. collector current 1.8 1.6 1.4 1.2 1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 0.8 0.6 0.4 0.2 Ta=25°C IC/IB=1000 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) 10k 20k 50k 100k Fig.4 DC current gain vs. collector current ( Ι ) VCE=10V Ta=25°C DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) 10k 20k 50k 100k Fig.5 DC current gain vs. collector current ( ΙΙ ) Ta=25°C VCE=5V Ta=25°C Ta=−55°C BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : IC (mA) 2.2 2.0 1.8 1.6 1.4 1 2 51 02 0 50 100 200 500 1000 1.2 1.0 0.8 0.6 0.4 Fig.7 Base emitter saturation voltage vs. collector current Ta=25°C IC/IB=1000 1.0 10 20 50 100 200 500 10005.02.0 CURRENT GAIN-BANDWIDTH PRODUCT (MHz) COLLECTOR CURRENT : IC (mA) 100 200 500 1000 Fig.8 Current gain-bandwidth product vs. collector current Ta=25°C VCE=5V 0.5 12 5 10 20 5 CAPACITANCE (pF) REVERSE BIAS VOLTAGE (V) 100 Fig.9 Capacitance vs. reverse bias voltage Ta=25°C f=1MHz Cib Cob
Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.