2SC2002 NEC | Alldatasheet
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NEC NPN SILICON TRANSISTOR ooo DESCRIPTION The 2SC2002 is designed for use in driver stage of high voltage audio equipments. PACKAGE DIMENSIONS in millimeters (inches) FEATURES © High total power dissipation. tons Wax) Py : 600 mW a © High hee and high voltage. z hee (Ic=50 mA): 200 TYP. 33 Vceo :60V aed ABSOLUTE MAXIMUM RATINGS ia TL. os _ Maximum Temperatures 0.018) Zz Maximum Power Dissipation (Ta= 25 °C) im FT] §s Maximum Voltages and Currents (Ta= 25 °C) “a4 bad . 1, EMITTER EIAJ :SC-43B ELECTRICAL CHARACTERISTICS (Ta=25 °C) hret* DC Current Gain 90 200 400 - Vce= 1.0 V, 1¢=50 mA hre2* DC Current Gain 30 80 - Vee = 2.0 V, I¢=300 mA Cob Collector to Base Capacitance 7.0 15 pF yee cove 'e=0 fr Gain Bandwidth Product 50 140 MHz = Vce=6.0 V, IE =-10 mA Vee* Base to Emitter Voltage 600 645 700 mv Vee = 6.0 V, Ig=10 mA Vce(set)” Collector Saturation Voltage 0.15 0.6 v 1¢=300 mA, 1g =30 mA VBE(set)* Base Saturation Voltage 086 = 1.2 v 1¢=300 mA, 1g=30 mA IcBo Collector Cutoff Current 100 nA Vcp= 60 V, Ig =0 ) leBo Emitter Cutoff Current 100 nA Veg 5.0 V, Ie=0 *Pulsed PW S 350 us, duty cycle S 2.0 %. Classification of heer a [Rarer [a= aoe [| hpe Test Conditions : Vce=1.0 V, I¢=50 mA 292
TYPICAL CHARACTERISTICS (Ta= 25 °C unless otherwise noted) TOTAL POWER DISSIPATION” ve AMBIENT TEMPERATURE (PRANSIENT THERMAL RESISTANCE) COLLECTOR TOEMITTER VOLTAGE o7 1000 eee 509 COC =| (SSSsey “Ooo FeO NCCOT) 7 SESS oP & = 4. Bos fe P“Oobgeooo Jos \\ Bop RY a’ Zoe Cl] 3 ESN V3 | 3 03 aw 5 of eo 5 20 LL Sa aL | E™T TING] ed eB e gz ne a eee & Wet ante SCC NC ob SSS Lp ee 1 on 2 eee ee pat TTT Tr eCLiT i IN | Coo FOE EEH on a5 309500 Ta 1d 175 le TD a a Ta—Ambient Temperature—"C VcECollector to Emitter Voltage—V VcE—Collector to Emitter Voltage—V COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE COLLECTOR CURRENT 20 gg 1000 pepe 1000 Saar fat Toh TT SSeS a | See eee ar a Er To =ssasao2eeeeee See See tiitieemact eesti meas a me Lol root ttt < 200} — ST ce=20 Vf] 5 ae a __ BSSSSa SaaS aa TN Sos seee ects Ss Errrri TPP) 3 “SSS § eS | ® weet el TT é ao 8 oo
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| tS Og CHR OF Se © Err stom TTT | % ete {COI | PRP re TTT} 8 thks LATIN TTT TT a oo Breas Te 3 ewe vin slo Vee~Colector to Emitter Vottage—V Masrscnsseaseae ig—Colector Curre Vge—Base to Emitter Voltage—V BASE AND COLLECTOR SATURATION VOLTAGE GAIN BANDWIDTH PRODUCT EMITTER TO BASE AND COLLECTOR TO BASE vs. COLLECTOR CURRENT vs. EMITTER CURRENT CAPACITANCE vs. REVERSE VOLTAGE L, =e i en — ea BT os Ee ro” | 2] qT Oo 33 oA iy |B ee gg “So ° 2 oe j 39) SS SS ge 0 SS Sa S$ eed |g ze FH w goo tim Timm TUM TT =F ol TET TTT be, BB crag as 1a 5 10-2030 106705 001000 Wipe ae ie PF ra sotto Ig— Collector Current—mA lg—Emitter Current—mA Veg—Emitter to Base Voltage—V Veg Collector to Base Voltage—V 293