2SC1970 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1970
DESCRIPTION
- High Power Gain- : G pe≥ 9.2dB,f= 175MHz, P O= 1W; VCC= 13.5V
- High Reliability
APPLICATIONS
- Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage RBE= ∞ 17 V VEBO Emitter-Base Voltage 4 V IC Collector Current 0.6 A Collector Power Dissipation @TC=25℃ 5 PC Collector Power Dissipation @Ta=25℃ 1 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 125 ℃/W Rth j-c Thermal Resistance,Junction to Case 25 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1970
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA, IE= 0 40 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 17 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA, IC= 0 4 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 0.1A; VCE= 10V 10 180 PO Output Power 1 1.2 W ηC Collector Efficiency VCC= 13.5V; Pin= 0.12W; f= 175MHz 50 60 % hFE Classifications X A B C D 10-25 20-45 35-70 55-110 90-180 isc Website：www.iscsemi.cn