2SC1969 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1969
DESCRIPTION
- High Power Gain- : G pe≥12dB,f= 27MHz, PO= 16W
- High Reliability
APPLICATIONS
- Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage RBE= ∞ 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 6 A Collector Power Dissipation @TC=25℃ 20 PC Collector Power Dissipation @Ta=25℃ 1.7 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 73.5 ℃/W Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1969
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 60 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA, IC= 0 5 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA hFE DC Current Gain IC= 10mA; VCE= 12V 10 180 PO Output Power 16 18 W ηC Collector Efficiency VCC= 12V; Pin= 1W; f= 27MHz 60 70 % hFE Classifications X A B C D 10-25 20-45 35-70 55-110 90-180 isc Website：www.iscsemi.cn